J
Johan Meersschaut
Researcher at IMEC
Publications - 97
Citations - 1746
Johan Meersschaut is an academic researcher from IMEC. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 19, co-authored 87 publications receiving 1394 citations. Previous affiliations of Johan Meersschaut include Katholieke Universiteit Leuven.
Papers
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Journal ArticleDOI
High-k dielectrics for future generation memory devices (Invited Paper)
Jorge A. Kittl,Karl Opsomer,Mihaela Popovici,Nicolas Menou,Ben Kaczer,X.P. Wang,Christoph Adelmann,M. A. Pawlak,K. Tomida,Aude Rothschild,Bogdan Govoreanu,Robin Degraeve,Marc Schaekers,Mohammed Zahid,Annelies Delabie,Johan Meersschaut,Wouter Polspoel,Sergiu Clima,Geoffrey Pourtois,Werner Knaepen,Christophe Detavernier,Valery V. Afanas'ev,Tom E. Blomberg,Dieter Pierreux,J. Swerts,P. Fischer,J. W. Maes,D. Manger,Wilfried Vandervorst,Thierry Conard,Alexis Franquet,Paola Favia,Hugo Bender,Bert Brijs,S. Van Elshocht,Malgorzata Jurczak,J. Van Houdt,Dirk Wouters +37 more
TL;DR: The requirements and development of high-k dielectric films for application in storage cells of future generation flash and dynamic random access memory (DRAM) devices are reviewed in this article.
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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Benjamin Vincent,Federica Gencarelli,Hugo Bender,Clement Merckling,Bastien Douhard,Dirch Hjorth Petersen,Ole Hansen,Henrik Hartmann Henrichsen,Johan Meersschaut,Wilfried Vandervorst,Marc Heyns,Roger Loo,Matty Caymax +12 more
TL;DR: In this paper, an atmospheric pressure-chemical vapor deposition technique was proposed to grow metastable GeSn epitaxial layers on Ge substrates with Sn contents up to 8% and those metastable layers stay fully strained after 30min anneal in N2 at 500°C; Ge-Sn interdiffusion is seen at 500 °C but not at lower temperature.
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Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
Federica Gencarelli,Benjamin Vincent,Jelle Demeulemeester,André Vantomme,Alain Moussa,Alexis Franquet,Arul Kumar,Hugo Bender,Johan Meersschaut,Wilfried Vandervorst,Roger Loo,Matty Caymax,Kristiaan Temst,Marc Heyns +13 more
TL;DR: In this article, the crystalline properties of strain and strain-relaxed CVD-grown GeSn layers with Sn content in the range 6.4-12.6 at.
Journal ArticleDOI
The conversion mechanism of amorphous silicon to stoichiometric WS2
Markus Heyne,Markus Heyne,Jean-Francois de Marneffe,Thomas Nuytten,Johan Meersschaut,Thierry Conard,Matty Caymax,Iuliana Radu,Annelies Delabie,Erik C. Neyts,Stefan De Gendt +10 more
TL;DR: In this article, a thin solid amorphous silicon film is used as reductant for the gas phase precursor WF6 leading to the conversion to metallic W. The role of the Si surface preparation, the conversion temperature, and Si thickness on the formation process is investigated.
Journal ArticleDOI
Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control
Anthony P Peter,Koen Martens,Geert Rampelberg,Michael Toeller,James M. Ablett,Johan Meersschaut,Daniel Cuypers,Alexis Franquet,Christophe Detavernier,Jean-Pascal Rueff,Marc Schaekers,Sven Van Elshocht,Malgorzata Jurczak,Christoph Adelmann,Iuliana Radu +14 more
TL;DR: In this article, the morphology of vanadium dioxide (VO2) films can be controlled to realize smooth ultrathin (<10 nm) crystalline films or nanoparticles with atomic layer deposition, opening doors to practical VO2 metal-insulator transition (MIT) nanoelectronics.