Wan-Ching Su

TL;DR: In this paper, the effect of mechanical strain on the performance of flexible amorphous In-Ga-Zn-O (a-InGaZnO) thin-film transistors is investigated.

TL;DR: In this paper, a review of the development of the LTPS thin-film transistors (TFTs) on soft and flexible electronics, especially the effect of mechanical strain is presented.

TL;DR: In this article, the multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device.

TL;DR: In this paper, the authors introduce a TFT manufacturing process in which the source/drain system is defined by hydrogen doping in the dielectric layer of the top-gate amorphous indium gallium zinc oxide (a-IGZO).

TL;DR: In this paper, a lower switching voltage of an ITO-based resistance random access memory (RRAM) with an inserted SiO2 thin film was presented, where the amplitude of switching voltage was below 0.2 V whether measured by direct current or alternating current sweep operation.