M
Markus Andreas Schubert
Researcher at Leibniz Institute for Neurobiology
Publications - 61
Citations - 1009
Markus Andreas Schubert is an academic researcher from Leibniz Institute for Neurobiology. The author has contributed to research in topics: Silicon & Epitaxy. The author has an hindex of 14, co-authored 61 publications receiving 804 citations. Previous affiliations of Markus Andreas Schubert include Innovations for High Performance Microelectronics & Leibniz Association.
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Journal ArticleDOI
A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
Holger Rucker,Bernd Heinemann,Wolfgang Winkler,R. Barth,J. Borngraber,Juergen Drews,G.G. Fischer,A. Fox,Thomas Grabolla,Ulrich Haak,Dieter Knoll,Falk Korndörfer,Andreas Mai,Steffen Marschmeyer,Peter Schley,Daniel Schmidt,J. Schmidt,Markus Andreas Schubert,K. Schulz,Bernd Tillack,Dirk Wolansky,Yuji Yamamoto +21 more
TL;DR: A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented and ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.
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Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
Amir Sammak,D. Sabbagh,N.W. Hendrickx,Mario Lodari,Brian Paquelet Wuetz,Alberto Tosato,LaReine Yeoh,Monica Bollani,Michele Virgilio,Markus Andreas Schubert,Peter Zaumseil,Giovanni Capellini,Menno Veldhorst,Giordano Scappucci +13 more
TL;DR: In this paper, a 2D hole gas of high mobility (5 × 105 cm2 V−1 s−1) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface.
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Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon
Gang Niu,Erwin Hildebrandt,Markus Andreas Schubert,Federico Boscherini,Marvin Hartwig Zoellner,Lambert Alff,Damian Walczyk,Peter Zaumseil,Ioan Costina,H. Wilkens,Thomas Schroeder +10 more
TL;DR: The possibility to directly grow RTFM Pr-doped CeO2 films on Si substrates, which can be an interesting candidate for potential magneto-optic or spintronic device applications is demonstrated.
Journal ArticleDOI
Graphene grown on Ge(001) from atomic source
Gunther Lippert,Jarek Dąbrowski,Thomas Schroeder,Markus Andreas Schubert,Yuji Yamamoto,Felix Herziger,Janina Maultzsch,Jens Baringhaus,Christoph Tegenkamp,Maria C. Asensio,José Avila,Grzegorz Lupina +11 more
TL;DR: In this article, it was shown that Ge(0,0,1) layers on Si wafers can be uniformly covered with graphene at temperatures between 800 −°C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2k Ω / □.
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Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
Gang Niu,Hee-Dong Kim,Robin Roelofs,Eduardo Perez,Markus Andreas Schubert,Peter Zaumseil,Ioan Costina,Christian Wenger +7 more
TL;DR: A systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours leads to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability.