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Xiaorui Zheng
Researcher at New York University
Publications - 42
Citations - 1372
Xiaorui Zheng is an academic researcher from New York University. The author has contributed to research in topics: Graphene & Photonics. The author has an hindex of 14, co-authored 31 publications receiving 871 citations. Previous affiliations of Xiaorui Zheng include Swinburne University of Technology & University of California, San Diego.
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Journal ArticleDOI
A 90-nm-thick graphene metamaterial for strong and extremely broadband absorption of unpolarized light
Han Lin,Björn C. P. Sturmberg,Keng-Te Lin,Yunyi Yang,Xiaorui Zheng,Teck K. Chong,C. Martijn de Sterke,Baohua Jia +7 more
TL;DR: In this article, the authors demonstrate a 12.5 cm2, 90nm-thick graphene metamaterial with approximately 85% absorptivity of unpolarized, visible and near-infrared light covering almost the entire solar spectrum.
Journal ArticleDOI
In Situ Third-Order Non-linear Responses During Laser Reduction of Graphene Oxide Thin Films Towards On-Chip Non-linear Photonic Devices
TL;DR: GO thin films with tunable nonlinear responses and versatile patterning opportunities by using direct laser writing may serve as promising solid-state materials for novel nonlinear functional devices.
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Highly efficient and ultra-broadband graphene oxide ultrathin lenses with three-dimensional subwavelength focusing.
TL;DR: A graphene oxide ultrathin flat lens that shows far-field three-dimensional subwavelength focusing (λ3/5) with an absolute focusing efficiency of >32% for a broad wavelength range from 400 to 1,500 nm is demonstrated.
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Graphene-Based Multilayered Metamaterials with Phototunable Architecture for on-Chip Photonic Devices
TL;DR: Graphene-based metamaterials have been theoretically demonstrated as an enabler for applications as perfect absorbers, photodetectors, light emitters, modulators, and tunable spintronic devices as discussed by the authors.
Journal ArticleDOI
Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography
Xiaorui Zheng,Xiaorui Zheng,Annalisa Calò,Annalisa Calò,Edoardo Albisetti,Edoardo Albisetti,Edoardo Albisetti,Xiangyu Liu,Xiangyu Liu,Abdullah Sanad M. Alharbi,Ghidewon Arefe,Xiaochi Liu,Martin Spieser,Won Jong Yoo,Takashi Taniguchi,Kenji Watanabe,Carmela Aruta,Alberto Ciarrocchi,Andras Kis,Brian S. Lee,Michal Lipson,James Hone,Davood Shahrjerdi,Elisa Riedo +23 more
TL;DR: In this paper, thermal scanning probe lithography is used to pattern metal electrodes in direct contact with monolayer MoS2, creating field effect transistors that exhibit vanishing Schottky barrier heights, high on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64