Proceedings ArticleDOI
High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs
Hisayo Momose,Eiji Morifuji,Takashi Yoshitomi,I. Saito,Toyota Morimoto,Yasuhiro Katsumata,Hiroshi Iwai +6 more
- pp 105-108
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TLDR
In this article, the high-frequency AC characteristics of 1.5 nm direct-tuning gate oxide MOSFET's were shown for the first time, and very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 /spl mu/m due to the high transconductance.Abstract:
Results of the high-frequency AC characteristics of 1.5 nm direct-tunneling gate oxide MOSFET's were shown for the first time. Very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 /spl mu/m regime due to the high transconductance. Excellent NF/sub min/ value of 0.51 dB was obtained at high-frequency operation of 2 GHz. Also, good operation of the 1.5 nm gate oxide CMOS ring oscillator has been confirmed.read more
Citations
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Journal ArticleDOI
Scaling the gate dielectric: materials, integration, and reliability
TL;DR: A review of the more "fundamental" concerns regarding the scaling of the gate dielectric in the ultrathin regime is presented and a methodology is presented to calculate device and chip lifetimes for MOS structures on the basis of data extracted from voltage- and temperature-accelerated measurements.
Book
Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design
Christian Enz,Eric A. Vittoz +1 more
TL;DR: In this article, the authors present a short history of the EKV most model and its application in IC design, and present an extended version of the model with an extended charge-based model.
Journal ArticleDOI
MOS transistor modeling for RF IC design
Christian Enz,Yuhua Cheng +1 more
TL;DR: In this article, the authors present the basis of the modeling of the MOS transistor for circuit simulation at RF and present a physical equivalent circuit that can be easily implemented as a Spice subcircuit.
Journal ArticleDOI
An MOS transistor model for RF IC design valid in all regions of operation
TL;DR: In this paper, a charge-based model of the intrinsic part of the MOS transistor is presented, which is based on the forward and reverse charges q/sub f/ defined as the mobile charge densities, evaluated at the source and at the drain.
Journal ArticleDOI
Microwave CMOS-device physics and design
TL;DR: A qualitative understanding of the microwave characteristics of MOS transistors is provided in this article, which is directed toward helping analog IC circuit designers create better front-end radio-frequency CMOS circuits.
References
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Proceedings ArticleDOI
High performance 0.1 /spl mu/m CMOS devices with 1.5 V power supply
Yuan Taur,Shalom J. Wind,Y.J. Mii,Y. T. Lii,D. Moy,Keith A. Jenkins,C.L. Chen,P.J. Coane,David P. Klaus,J.J. Bucchignano,M. G. Rosenfield,M.G.R. Thomson,M.R. Polcari +12 more
TL;DR: In this article, the design, fabrication, and characterization of high-performance 0.1 /spl mu/m-channel CMOS devices with dual n/sup +p/sup+/ polysilicon gates on 35 /spl Aring/-thick gate oxide was presented.
Proceedings ArticleDOI
Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs
Hisayo Momose,Mizuki Ono,Takashi Yoshitomi,Tatsuya Ohguro,S. Nakamura,Masanobu Saito,Hiroshi Iwai +6 more
TL;DR: In this paper, the gate leakage current falls in proportion to the gate length and the drain current increases in inverse proportion, and a very high drivability of 1.1 mAspl mu/m at 15 V was obtained, with a 0.14 pm gate length.
Proceedings ArticleDOI
High performance 0.15 /spl mu/m single gate Co salicide CMOS
Takashi Yoshitomi,Tatsuya Ohguro,Masanobu Saito,Mizuki Ono,Eiji Morifuji,Hisayo Momose,Hiroshi Iwai +6 more
TL;DR: In this article, a 0.15/spl mu/m single gate Co salicide CMOS technology was developed by optimizing the fabrication conditions of pMOSFETs extension region.