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Ying Dai

Researcher at Shandong University

Publications -  827
Citations -  41002

Ying Dai is an academic researcher from Shandong University. The author has contributed to research in topics: Photocatalysis & Band gap. The author has an hindex of 87, co-authored 706 publications receiving 31538 citations. Previous affiliations of Ying Dai include North Carolina State University & Northern Illinois University.

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Photoexcitation Dynamics in Janus-MoSSe/WSe2 Heterobilayers: Ab Initio Time-Domain Study.

TL;DR: The atomistic picture revealed in this work provides chemical guidelines and facilitates the design of next-generation devices for light detecting and harvesting, and results of high photoresponsivity in a broad range of the spectrum endows proposed systems powerful potential in optoelectronic and photovoltaic applications.
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Electron-Rotor Interaction in Organic-Inorganic Lead Iodide Perovskites Discovered by Isotope Effects.

TL;DR: A time-resolved photoluminescence (TRPL) study reveals that CH3NH3PbI3 exhibits notably longer carrier lifetime than that of CH3ND3P bI3, in both thin-film and single-crystal formats, and suggests that vibrational modes in methylammonium (MA(+)) have little impact on carrier lifetime.
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Sc2C as a Promising Anode Material with High Mobility and Capacity: A First-Principles Study

TL;DR: A systematic investigation of Li/Na atom adsorption and diffusion on Sc2 C planes was performed and the results suggest that Sc2C could be a promising anode candidate for both lithium-ion and sodium-ion batteries.
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One-step synthesis of AgCl concave cubes by preferential overgrowth along 〈111〉 and 〈110〉 directions

TL;DR: A new class of AgCl microstructures, concave cubes, with preferential overgrowth along <110> and <111> directions, has been prepared in a monodisperse fashion by a wet chemical oxidization method that exhibits higher photocatalytic activity in O(2) evolution than cubic ones.
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First-principles calculations for geometrical structures and electronic properties of Si-doped TiO2

TL;DR: In this paper, the geometrical structures and electronic properties of Si-doped TiO 2 were studied using spin-polarized density functional theory calculations, and it was shown that the valence band maximum has a little raise in substitutional Si-to-OdTiO 2, and the Fermi level is pinned in the conduction band edge.