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Ying Dai

Researcher at Shandong University

Publications -  827
Citations -  41002

Ying Dai is an academic researcher from Shandong University. The author has contributed to research in topics: Photocatalysis & Band gap. The author has an hindex of 87, co-authored 706 publications receiving 31538 citations. Previous affiliations of Ying Dai include North Carolina State University & Northern Illinois University.

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Bi20TiO32 Nanoparticles Doped with Yb3+ and Er3+ as UV, Visible, and Near-Infrared Responsive Photocatalysts

TL;DR: In this paper, the authors employed Yb3+ and Er3+ ions doped in a narrow bandgap oxide Bi20TiO32:YbEr, which can achieve near-infrared (NIR) responsive upconversion (UC) photocatalysi...
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Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO2 heterostructure

TL;DR: Detailed investigations show that these versatile modulations of the SBH with the structure and strain are mainly attributed to the strong dependence of the band edges of TiO2 and the interfacial potential alignments on the strain and structure, suggesting that these results are general and may be applicable to other metal/TiO2 heterostructures.
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Bilayer graphene anode for small molecular organic electroluminescence

TL;DR: In this article, bilayer graphene was used as the anode of a small molecule organic light-emitting diode (OLED) and the maxima of luminance efficiency and power efficiency reached 1.18cd A−1 and 0.41lm W−1, respectively.
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Electronic properties of Janus MXY/graphene (M = Mo, W; X ≠ Y = S, Se) van der Waals structures: a first-principles study.

TL;DR: The results show that Janus MXY monolayer has an intrinsic dipole moment and a direct band gap, however, for MXY bilayers strong interlayer coupling will cause direct to indirect band gap transition, and the existence of the dipole Moment leads to a significantly large interlayer band offset, being the driving force for the formation of interlayer excitons.
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In-plane heterostructures of Sb/Bi with high carrier mobility

TL;DR: The results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied and the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis.