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Ying Dai

Researcher at Shandong University

Publications -  827
Citations -  41002

Ying Dai is an academic researcher from Shandong University. The author has contributed to research in topics: Photocatalysis & Band gap. The author has an hindex of 87, co-authored 706 publications receiving 31538 citations. Previous affiliations of Ying Dai include North Carolina State University & Northern Illinois University.

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Group IV Monochalcogenides MX (M=Ge, Sn; X=S, Se) as Chemical Anchors of Polysulfides for Lithium-Sulfur Batteries.

TL;DR: This work reports phosphorene-like MX (M=Ge, Sn; X=S, Se) monolayers as promising anchoring materials to restrain the lithium polysulfides shuttling and shows that excellent surface diffusion of Li and polysolfides endow a fast charge/discharge rate for lithium-sulfur batteries.
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Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond

TL;DR: In this article, the role of two boron-hydrogen complexes in conductivity conversion from p-type to n-type in diamond samples was investigated, and it was shown that the transformation from the BH1 into BH2 and/or BH3 complexes may explain the phenomenon of conversion from P-type-to-n-type conductivity through deuteration.
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Precisely locate Pd-Polypyrrole on TiO2 for enhanced hydrogen production

TL;DR: In this article, a one-step simultaneous photo-deposited method was proposed to precisely locate Pd and PPy nanoparticles on TiO 2, in other words, the places where Pd was deposited are just the active sites that the photoinduced electrons and holes participated in the photocatalytic reaction, which is beneficial for separation of photo-induced carriers.
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Space-confined growth of lead-free halide perovskite Cs3Bi2Br9 in MCM-41 molecular sieve as an efficient photocatalyst for CO2 reduction at the gas−solid condition under visible light

TL;DR: In this paper , a facile and effective impregnation method is employed to synthesize the space-confined growth of lead-free halide perovskite Cs3Bi2Br9 in MCM-41 molecular sieve.
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Intrinsic defect in BiNbO4: A density functional theory study

Abstract: Formation energies, transition energy levels, and electronic properties of various intrinsic defects in BiNbO4 systems are studied based on the first-principles density-functional theory. Our results indicate that the acceptor defects form easier than donor defects under O rich condition, while it is opposite under Bi rich condition. Under O-rich condition, Bi vacancies (Bivac) leading to p-type conductivity are the dominant intrinsic defects, whereas O vacancies (Ovac) inducing moderate n-type conductivity are the dominant intrinsic defects under Bi-rich condition. Among these intrinsic defects, Ovac is a deep donor; to the contrary, Bivac is found to be a shallow acceptor which is benefit to the separation and migration of the photogenerated carriers. Consequently, the BiNbO4 with Bivac under O-rich growth condition should be of better photocatalytic performance.