In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

Ferromagnetic materials

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

/pdf/light-emitting-diodes-ubzde6g9qc.pdf

Light-emitting diodes

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

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Design Of Analog Cmos Integrated Circuits

In recent years, free space optical (FSO) communication has gained significant importance owing to its unique features: large bandwidth, license free spectrum, high data rate, easy and quick deployability, less power, and low mass requirements. FSO communication uses optical carrier in the near infrared band to establish either terrestrial links within the Earth’s atmosphere or inter-satellite/deep space links or ground-to-satellite/satellite-to-ground links. It also finds its applications in remote sensing, radio astronomy, military, disaster recovery, last mile access, backhaul for wireless cellular networks, and many more. However, despite of great potential of FSO communication, its performance is limited by the adverse effects (viz., absorption, scattering, and turbulence) of the atmospheric channel. Out of these three effects, the atmospheric turbulence is a major challenge that may lead to serious degradation in the bit error rate performance of the system and make the communication link infeasible. This paper presents a comprehensive survey on various challenges faced by FSO communication system for ground-to-satellite/satellite-to-ground and inter-satellite links. It also provides details of various performance mitigation techniques in order to have high link availability and reliability. The first part of this paper will focus on various types of impairments that pose a serious challenge to the performance of optical communication system for ground-to-satellite/satellite-to-ground and inter-satellite links. The latter part of this paper will provide the reader with an exhaustive review of various techniques both at physical layer as well as at the other layers (link, network, or transport layer) to combat the adverse effects of the atmosphere. It also uniquely presents a recently developed technique using orbital angular momentum for utilizing the high capacity advantage of optical carrier in case of space-based and near-Earth optical communication links. This survey provides the reader with comprehensive details on the use of space-based optical backhaul links in order to provide high capacity and low cost backhaul solutions.

/pdf/optical-communication-in-space-challenges-and-mitigation-41d8by09lh.pdf

Optical Communication in Space: Challenges and Mitigation Techniques

Based on the k.p theory of Luttinger-Kohn and Bir-Pikus, analytical E-k solutions for the valence band of strained wurtzite ZnO materials are obtained. Strain effects on valence band edges and hole effective masses in strained wurtzite ZnO materials are also discussed. In comparison with unstrained ZnO materials, apparent movement of valence band edges such as “light hole band”, “heavy hole band” and “crystal splitting band” at Γ point is found in strained wurtzite ZnO materials. Moreover, effective masses of “light hole band”, “heavy hole band” and “crystal splitting band” for strained wurtzite ZnO materials as the function of stress are given. The analytical results can provide a theoretical foundation for the understanding of physics of strained ZnO materials and its applications with the framework for an effective mass theory.

https://rd.springer.com/content/pdf/10.1007%2Fs11433-013-5132-3.pdf

Strain effects on valence bands of wurtzite ZnO

In order to obtain an ultrasonic transducer (UT) with ultra-broad bandwidth (BW), a multilayer stairstep piezoelectric structure (MSPS) is designed and fabricated. Based on the theoretical computation, the relationship between the resonant frequency and thickness of the piezoelectric layer is obtained. The designed MSPS includes 15 layers from center to side, and its frequency range is 5–22 MHz. The finite element method (FEM) based PZFlex software is used to predict the performance of UT with the designed MSPS, and the thickness of each layer is optimized according to the simulation results to achieve the ultra-broad-BW UT. The UT with the designed MSPS is fabricated and systematically characterized. The measured results show that the fabricated UT has a center frequency of 10.54 MHz and a −6 dB BW of 121%, which agree well with the simulation results (11.75 MHz and 140%). The MSPS has significant potential in UT applications.

Multilayer Stairstep Piezoelectric Structure Design for Ultrabroad-Bandwidth Ultrasonic Transducer

As one of the core techniques in the Internet of Things (IoT), Radio Frequency Identification (RFID) plays a crucial role in IoT development. Although the low-cost RFID system has wide prospect, it has to face with huge challenges because of potential security risks, privacy problems and efficiency due to its limitations of processing capability, and storage space and power supply in RFID tags. The lightweight RFID mutual authentication protocol is one of the possible solutions in secure authentication of the low-cost RFID system. In this paper, we propose a lightweight RFID mutual authentication protocol with cache in the reader, named LRMAPC, to store the recent visited key of tags in LRMAPC, so that recent visited tags can be authenticated directly in the reader. The LRMAPC can greatly reduce the computational and transmission cost. Especially, it can reduce computational costs greatly when a large number of tags want to be authenticated. We prove the correctness of LRMAPC using GNY Logic. Compared with other existing works, LRMAPC achieves stronger security and higher efficiency.

LRMAPC: A Lightweight RFID Mutual Authentication Protocol with Cache in the Reader for IoT

A resolution configurable ultra-low power SAR ADC in 0.18 μm CMOS process is presented. The proposed ADC has maximum sampling rate of 100 KS/s with configurable resolution from 8 to 10 b and operates at a supply of 0.6 V. Two-stage bootstrapped switch and voltage boosting techniques are introduced to improve the performance of the ADC at low voltage. To reduce the power consumption of the analog components of the ADC, monotonic capacitor switching procedure and fully dynamic comparator are utilized. The implementation of dynamic logic further reduces the power of the digital circuits. Post-layout simulation results show that the proposed SAR ADC consumes 521 nW and achieves an SNDR of 60.54 dB at 10 b mode, resulting in an ultra-low figure-of-merit of 6.0 fJ/conversion-step. The ADC core occupies an active area of only 350 × 280 μm2.

A 0.6 V 100 KS/s 8---10 b resolution configurable SAR ADC in 0.18 μm CMOS

The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time The analytical solutions of the surface electric field distributions and potential distributions are derived on the basis of the 2-D Poisson equation The variation of the buried layer parameters modulates the surface electric field by the electric field modulation effect to optimize the surface electric field distribution of the device Also, the simulation results obtained through the simulation software ISE are consistent with the expected results of the analytical model This not only proves the feasibility of the electric field modulation theory, but also shows that the accurate analytical model will be of great guiding significance for designing and optimizing the same LDMOS based on SOI structures

/pdf/unified-analytical-model-for-soi-ldmos-with-electric-field-3b9wb1vo4h.pdf

Yintang Yang

Papers

Strain effects on valence bands of wurtzite ZnO

Multilayer Stairstep Piezoelectric Structure Design for Ultrabroad-Bandwidth Ultrasonic Transducer

LRMAPC: A Lightweight RFID Mutual Authentication Protocol with Cache in the Reader for IoT

A 0.6 V 100 KS/s 8---10 b resolution configurable SAR ADC in 0.18 μm CMOS

Unified Analytical Model for SOI LDMOS With Electric Field Modulation