Journal ArticleDOI
Recent progress in Ga2O3 power devices
Masataka Higashiwaki,Kohei Sasaki,Hisashi Murakami,Yoshinao Kumagai,Akinori Koukitu,Akito Kuramata,Takekazu Masui,Shigenobu Yamakoshi +7 more
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TLDR
In this article, a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices is presented, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy.Abstract:
This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses excellent material properties, in particular for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured from a single-crystal bulk synthesized by melt–growth methods. These two features have drawn much attention to Ga2O3 as a new wide bandgap semiconductor following SiC and GaN. In this review, we describe the recent progress in the research and development on fundamental technologies of Ga2O3 devices, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy, as well as device processing and characterization of metal–semiconductor field-effect transistors, metal–oxide–semiconductor field-effect transistors and Schottky barrier diodes.read more
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A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
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Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.
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Perspective—Opportunities and Future Directions for Ga2O3
Journal ArticleDOI
Intrinsic electron mobility limits in β-Ga2O3
TL;DR: By systematically comparing experimental and theoretical transport properties, the authors identified the polar optical phonon scattering as the dominant mechanism limiting electron mobility in β-Ga2O3 to <200 cm2/V
References
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
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Deep-ultraviolet transparent conductive β-Ga2O3 thin films
TL;DR: In this article, β-Ga2O3 with an energy band gap of 4.9 eV was prepared on silica glass substrates by a pulsed-laser deposition method, and the resulting internal transmittance at the wavelength (248 nm) of the KrF excimer laser exceeded 50% for the 100-nm-thick film.
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Polymorphism of Ga2O3 and the System Ga2O3—H2O
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Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3
TL;DR: In this article, a model was proposed in which the absorption arises as a result of excitation of an electron from the oxygen $2p$ band to the gallium $4s$ band.
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Oxygen vacancies and donor impurities in β-Ga2O3
TL;DR: In this paper, the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide β-Ga2O3 was investigated using hybrid functionals.