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Zhiyong Fan

Researcher at Hong Kong University of Science and Technology

Publications -  291
Citations -  24042

Zhiyong Fan is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Nanowire & Perovskite (structure). The author has an hindex of 76, co-authored 252 publications receiving 20330 citations. Previous affiliations of Zhiyong Fan include University of California, Berkeley & Oak Ridge National Laboratory.

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Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates

TL;DR: The direct growth of highly regular, single-crystalline nanopillar arrays of optically active semiconductors on aluminium substrates that are then configured as solar-cell modules for enabling highly versatile solar modules on both rigid and flexible substrates with enhanced carrier collection efficiency arising from the geometric configuration of the nanopillars.
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ZnO nanowire field-effect transistor and oxygen sensing property

TL;DR: In this paper, single-crystal ZnO nanowires are synthesized using a vapor trapping chemical vapor deposition method and configured as field effect transistors, and electrical transport studies show n-type semiconducting behavior with a carrier concentration of ∼107cm−1 and an electron mobility of ∼17cm2∕Vs.
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Zinc oxide nanostructures: synthesis and properties.

TL;DR: A range of remarkable characteristics of ZnO nanostructures are presented, organized into sections describing the mechanical, electrical, optical, magnetic, and chemical sensing properties.
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Recent advances in synthesis, physical properties and applications of conducting polymer nanotubes and nanofibers

TL;DR: In this paper, various preparation methods, physical properties, and potential applications of one-dimensional nanostructures of conjugated polyaniline (PANI), polypyrrole (PPY) and poly(3,4-ethylenedioxythiophene) (PEDOT) are summarized and reviewed.
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Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing.

TL;DR: In this article, the authors present a control and uniform assembly of bottom-up nanowire (NW) materials with high scalability, which is one of the significant bottleneck challenges facing the integration of nanowires for electronic devices.