Z
Zhongjie Ren
Researcher at University of California, San Diego
Publications - 15
Citations - 362
Zhongjie Ren is an academic researcher from University of California, San Diego. The author has contributed to research in topics: Light-emitting diode & Quantum efficiency. The author has an hindex of 6, co-authored 15 publications receiving 180 citations. Previous affiliations of Zhongjie Ren include University of Science and Technology of China & King Abdullah University of Science and Technology.
Papers
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Journal ArticleDOI
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
Zhongjie Ren,Zhongjie Ren,Huabin Yu,Zhongling Liu,Danhao Wang,Chong Xing,Haochen Zhang,Chen Huang,Shibing Long,Haiding Sun +9 more
TL;DR: In this article, the authors summarize the recent progress on various energy band designs and engineering of DUV LEDs, with particular of interest paid on the various approaches in band engineering of the electron blocking layer, quantum well, quantum barrier and the implementation of many novel structures such as tunnel junctions, ultrathin quantum heterostructures to enhance their efficiency.
Journal ArticleDOI
AlGaN-based deep ultraviolet micro-LED emitting at 275 nm.
Huabin Yu,Muhammad Hunain Memon,Danhao Wang,Zhongjie Ren,Haochen Zhang,Chen Huang,Meng Tian,Haiding Sun,Shibing Long +8 more
TL;DR: In this article, the electrical and optical properties of micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at ∼275nm were carried out, with an emphasis on fabricated devices having a diameter of 300, 200, 100, 50, and 20 µm, respectively.
Journal ArticleDOI
Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation
Haiding Sun,Davide Priante,Jung-Wook Min,Ram Chandra Subedi,Mohammad Khaled Shakfa,Zhongjie Ren,Kuang-Hui Li,Ronghui Lin,Chao Zhao,Tien Khee Ng,Jae-Hyun Ryou,Xixiang Zhang,Boon S. Ooi,Xiaohang Li +13 more
TL;DR: In this article, a novel nanowire structure adopting a graded-index separate confinement heterostructure (GRINSCH) in which the active region is sandwiched between two compositionally graded AlGaN layers, namely, a GRINSCH diode, is proposed.
Journal ArticleDOI
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier.
TL;DR: It is found that a relatively thinner graded QB layer could further boost the LED performance because of the increased carrier concentrations and enhanced electron and hole wave function overlap in the QW, triggering a much higher radiative recombination efficiency.
Journal ArticleDOI
III-Nitride Deep UV LED Without Electron Blocking Layer
Zhongjie Ren,Yi Lu,Hsin-Hung Yao,Haiding Sun,Che-Hao Liao,Jiangnan Dai,Changqing Chen,Jae-Hyun Ryou,Jianchang Yan,Junxi Wang,Jinmin Li,Xiaohang Li +11 more
TL;DR: In this paper, the authors showed that electron overflow can be significantly impacted by the slope variation of the quantum barrier conduction and valence bands, which in turn influence radiative recombination and optical output power.