Hengyang Normal University

About: Hengyang Normal University is a education organization based out in Hengyang, China. It is known for research contribution in the topics: Graphene & Adsorption. The organization has 1087 authors who have published 1280 publications receiving 13850 citations. The organization is also known as: Hengyang Teachers' College & Héngyáng Shīfàn Xuéyuàn.

Synthesis of a nanocomposite consisting of Cu 2 O and N-doped reduced graphene oxide with enhanced electrocatalytic activity for amperometric determination of diethylstilbestrol

Abstract: The authors report on a low temperature method for large-scale fabrication of cuprous oxide nanocubes deposited on nitrogen-doped reduced graphene oxide (Cu2O/N-RGO). The material was deposited in a glassy carbon electrode (GCE) where it is found to display enhanced electrocatalytic activity for oxidation of diethylstilbestrol (DES). The morphology and composition of Cu2O/N-RGO were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and energy-dispersive spectroscopy. The results demonstrate that the RGO is doped with 3.5% of nitrogen (atomic ratio), and that nanostructured Cu2O particles with controlled cubical morphology and an average size of about 450 nm have been homogeneously deposited on the surface of N-RGO sheets. The oxidation peak of DES was recorded at 0.315 V (vs. saturated calomel electrode) using differential pulse voltammetry. Under the optimal conditions, the modified GCE displays a linear response in the 0.3 to 150 μM DES concentration range, and the limit of detection is 10 nM. The method was applied to the determination of DES in spiked milk, meat and urine samples and gave excellent selectivity, stability and reproducibility.

Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS 2

Abstract: Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not directly observed in freestanding 2D MoS2 before. In this report, we demonstrate the coexistence of three RSFs with three different rotational angles in a freestanding bilayer MoS2 sheet as directly observed using an aberration-corrected transmission electron microscope (TEM). Our analyses show that these RSFs originate from cracks and dislocations within the bilayer MoS2. First-principles calculations indicate that RSFs with different rotational angles change the electronic structures of bilayer MoS2 and produce two new symmetries in their bandgaps and offset crystal momentums. Therefore, employing RSFs and their coexistence is a promising route in defect engineering of MoS2 to fabricate suitable devices for electronics, optoelectronics, and energy conversion.