Institution
Hengyang Normal University
Education•Hengyang, China•
About: Hengyang Normal University is a education organization based out in Hengyang, China. It is known for research contribution in the topics: Graphene & Adsorption. The organization has 1087 authors who have published 1280 publications receiving 13850 citations. The organization is also known as: Hengyang Teachers' College & Héngyáng Shīfàn Xuéyuàn.
Topics: Graphene, Adsorption, Nonlinear system, Catalysis, Qubit
Papers published on a yearly basis
Papers
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TL;DR: Electrochemical characterization studies show that the pillared graphene composite exhibits a high reversible capacity and an excellent rate capability, which are superior to graphene owing to the unique pillared and the nitrogen-doped structure.
Abstract: Pillared graphene composite (GP) is prepared by in situ polymerization and subsequent carbonization of graphene oxide (GO) and polyaniline (PANI) precursors. The interlayer spacing of GO layer can reach 1.418 nm with 200% increase compared with the original spacing of 0.706 nm by the intercalation of aniline monomer through π-π conjugate and electrostatic interactions. After carbonization, the graphene composite is reinforced by the intercalated PANI-converted carbon pillars and also has a nitrogen-doped level of ca. 4.49 atom%. Electrochemical characterization studies show that the GP composite exhibits a high reversible capacity of 653 mAh g-1 at a current density of 100 mA g-1 and an excellent rate capability (343 mAh g-1 at a current density of 1 A g-1), which are superior to graphene owing to the unique pillared and the nitrogen-doped structure.
8 citations
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TL;DR: In this article, the bounded mean oscillation of planar harmonic mappings is studied, and a relationship between Lipschitz-type spaces and real harmonic mapping modulus is established.
Abstract: In this paper, we first study the bounded mean oscillation of planar
harmonic mappings, then a relationship between Lipschitz-type spaces and
equivalent modulus of real harmonic mappings is established.
At last, we obtain sharp estimates on Lipschitz number of planar harmonic
mappings in terms of
bounded mean oscillation norm, which shows that the harmonic Bloch space is
isomorphic to $BMO_{2}$ as a Banach space.
10.1017/S0004972712000998
8 citations
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TL;DR: In this article, a geographically constrained chronosequence of peatlands divided into three age classes was used to explore the role of biogeochemical influences, including electron donors and acceptors as well as chemical speciation of inorganic mercury (Hg(II)), on net formation of methylmercury (MeHg) as approximated by the fraction of MeHg to total mercury (THg) in the peat soil.
8 citations
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TL;DR: In this article, the electron transport properties of boron nitride chains between 2D metallic borophene electrodes were investigated by using nonequilibrium Green's functions in combination with the density functional theory.
Abstract: Recently, boron nitride (BN) chains have been made from hexagonal BN sheets. However, the BN sheet has a large band gap, which is not suitable to be used as the electrode material of BN chain-based two-dimensional (2D) electronic devices. The successful preparation of borophene sheets opens a possible way for building BN chain-based 2D devices. The borophene is a metal material with strong oxidation resistance. In particular, recent experimental results show that the borophene exists massless Dirac fermions, which makes it a suitable candidate for constructing high-speed low-dissipation devices. Here, we investigate the electron transport properties of boron nitride chains between 2D metallic borophene electrodes by using nonequilibrium Green's functions in combination with the density functional theory. Surprisingly, the BN chain displays metallic characteristic when coupled into 2D borophene electrodes. Inherent negative differential resistance behaviors can be observed in the BN chains sandwiched between 2D metallic borophene. Meanwhile, the current superposition law is studied in BN chain-based 2D circuits. Results show that the current value of BN chain-based system with parallel paths is more than twice that with a single path, which is different from Kirchhoff's circuit laws. Moreover, the effects of strain on the electron transport properties of BN chain-based 2D electronic devices are also studied.
8 citations
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TL;DR: In this paper, an anisotropic epsilon-near-zero slab was proposed to enhance the transmission efficiency of second-order differentiators and discussed the Berry phase mechanism of this optical calculation process.
Abstract: Several works on optical higher-order differential operations have recently attracted attention, particularly in image processing for edge detection. However, the inefficient differential operation leads to barriers to practical applications. Here, we report an anisotropic epsilon-near-zero slab to significantly enhance the transmission efficiency of second-order differentiators and discuss the Berry phase mechanism of this optical calculation process. Through a rigorous full-wave analysis of the process, we find that the conversion efficiency of differential operation depends on the spin-orbit interactions. Our scheme can strengthen the spin-orbit interaction by introducing anisotropy, which significantly enhances the transmission efficiency. We finally give transfer functions to reveal how to improve the efficiency and compare the quadratic coefficient among different systems. This highly efficient differentiation operation may develop significant applications in fast, compatible, and power-efficient ultrathin devices for data processing and biological imaging.
8 citations
Authors
Showing all 1097 results
Name | H-index | Papers | Citations |
---|---|---|---|
Jian Liu | 117 | 2090 | 73156 |
Jin-Heng Li | 44 | 227 | 5749 |
He-Xiu Xu | 37 | 93 | 3620 |
Wei Zhou | 35 | 191 | 4238 |
Lixin Xiao | 33 | 186 | 5300 |
Xiaohui Ling | 31 | 90 | 3197 |
Junhua Li | 28 | 77 | 2205 |
Shan Zou | 27 | 91 | 2894 |
Xiaojiang Peng | 23 | 73 | 2860 |
Ying Yan | 21 | 69 | 1163 |
Zhifeng Xu | 21 | 34 | 1490 |
Fulong Chen | 20 | 72 | 1009 |
Zhifeng Yang | 20 | 34 | 1923 |
Man-Sheng Chen | 20 | 29 | 1568 |
Lei Wang | 19 | 158 | 1466 |