Nanosystems Initiative Munich

About: Nanosystems Initiative Munich is a facility organization based out in Munich, Germany. It is known for research contribution in the topics: Quantum dot & Perovskite (structure). The organization has 323 authors who have published 549 publications receiving 24316 citations.

Spin Hall magnetoimpedance

Abstract: The recently discovered spin Hall magnetoresistance effect electrically probes pure spin current flow across a ferrimagnetic insulator/normal metal bilayer interface. While usually the dc electrical resistance of the bilayer is measured as a function of the magnetization orientation in the magnetic insulator, here we present magnetoimpedance measurements using bias currents with frequencies up to several GHz. We find that the spin Hall magnetoresistance effect is frequency independent up to frequencies of 3 GHz, corroborating the assumption of a frequency-independent spin Hall angle. Our data therefore show that all interaction time constants relevant for the spin Hall magnetoresistance effect are shorter than about 50 ps. Therefore this technique should allow for the fast readout of the magnetization direction in magnetic insulator/normal metal bilayers.

Quantitative Modeling of Superconducting Planar Resonators for Electron Spin Resonance

Abstract: Engineering and understanding microwave resonators is essential for the efficient electron-spin control and readout in electron-spin-resonance (ESR) spectroscopy. This work, focused on superconducting planar microresonators, presents finite-element simulations modeling the spin-photon coupling rate, in quantitative agreement with experimental data. Three resonator designs are optimized to address spectroscopy applications in $\ensuremath{\mu}$m-thick samples, with one exhibiting notably good magnetic field homogeneity at microwave frequencies.

In-plane anisotropy of the photon-helicity induced linear Hall effect in few-layer WTe 2

Abstract: Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect.

Asymptotic Floquet states of a periodically driven spin-boson system in the nonperturbative coupling regime.

Abstract: Being an exemplary model of open quantum system, the spin-boson model is widely employed in theoretical and experimental studies. Beyond the weak coupling limit, the spin-boson dynamics can be described by a time-nonlocal generalized master equation with a memory kernel accounting for the dissipative effects induced by the bosonic environment. When the spin is in addition modulated by an external time-periodic electromagnetic field, the interplay between dissipation and forcing provides a spectrum of nontrivial asymptotic states, especially so in the regime of nonlinear response. Here we implement the method for evaluating the dissipative Floquet dynamics of non-Markovian systems introduced in Magazzu et al. [Phys. Rev. A 96, 042103 (2017)2469-992610.1103/PhysRevA.96.042103] to obtain these nonequilibrium asymptotic states.

Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor

Abstract: We have measured both the current-voltage ( ISD- VGS) and capacitance-voltage (C- VGS) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured ISD- VGS characteristics over the entire range of VGS. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.