Nanosystems Initiative Munich

About: Nanosystems Initiative Munich is a facility organization based out in Munich, Germany. It is known for research contribution in the topics: Quantum dot & Perovskite (structure). The organization has 323 authors who have published 549 publications receiving 24316 citations.

Quantum teleportation of propagating quantum microwaves

Abstract: Propagating quantum microwaves have been proposed and successfully implemented to generate entanglement, thereby establishing a promising platform for the realisation of a quantum communication channel. However, the implementation of quantum teleportation with photons in the microwave regime is still absent. At the same time, recent developments in the field show that this key protocol could be feasible with current technology, which would pave the way to boost the field of microwave quantum communication. Here, we discuss the feasibility of a possible implementation of microwave quantum teleportation in a realistic scenario with losses. Furthermore, we propose how to implement quantum repeaters in the microwave regime without using photodetection, a key prerequisite to achieve long distance entanglement distribution.

ARAM: an automated image analysis software to determine rosetting parameters and parasitaemia in Plasmodium samples.

Abstract: Rosetting is associated with severe malaria and a primary cause of death in Plasmodium falciparum infections. Detailed understanding of this adhesive phenomenon may enable the development of new therapies interfering with rosette formation. For this, it is crucial to determine parameters such as rosetting and parasitaemia of laboratory strains or patient isolates, a bottleneck in malaria research due to the time consuming and error prone manual analysis of specimens. Here, the automated, free, stand-alone analysis software automated rosetting analyzer for micrographs (ARAM) to determine rosetting rate, rosette size distribution as well as parasitaemia with a convenient graphical user interface is presented. Automated rosetting analyzer for micrographs is an executable with two operation modes for automated identification of objects on images. The default mode detects red blood cells and fluorescently labelled parasitized red blood cells by combining an intensity-gradient with a threshold filter. The second mode determines object location and size distribution from a single contrast method. The obtained results are compared with standardized manual analysis. Automated rosetting analyzer for micrographs calculates statistical confidence probabilities for rosetting rate and parasitaemia. Automated rosetting analyzer for micrographs analyses 25 cell objects per second reliably delivering identical results compared to manual analysis. For the first time rosette size distribution is determined in a precise and quantitative manner employing ARAM in combination with established inhibition tests. Additionally ARAM measures the essential observables parasitaemia, rosetting rate and size as well as location of all detected objects and provides confidence intervals for the determined observables. No other existing software solution offers this range of function. The second, non-malaria specific, analysis mode of ARAM offers the functionality to detect arbitrary objects. Automated rosetting analyzer for micrographs has the capability to push malaria research to a more quantitative and statistically significant level with increased reliability due to operator independence. As an installation file for Windows © 7, 8.1 and 10 is available for free, ARAM offers a novel open and easy-to-use platform for the malaria community to elucidate rosetting.

Realization of d-electron spin transport at room temperature at a LaAlO3/SrTiO3 interface

Abstract: A d-orbital electron has an anisotropic electron orbital and is a source of magnetism. The realization of a 2-dimensional electron gas (2DEG) embedded at a LaAlO3/SrTiO3 interface surprised researchers in materials and physical sciences because the 2DEG consists of 3d-electrons of Ti with extraordinarily large carrier mobility, even in the insulating oxide heterostructure. To date, a wide variety of physical phenomena, such as ferromagnetism and the quantum Hall effect, have been discovered in this 2DEG systems, demonstrating the ability of the d-electron 2DEG systems to provide a material platform for the study of interesting physics. However, because of both ferromagnetism and the Rashba field, long-range spin transport and the exploitation of spintronics functions have been believed difficult to implement in the d-electron 2DEG systems. Here, we report the experimental demonstration of room-temperature spin transport in the d-electron-based 2DEG at a LaAlO3/SrTiO3 interface, where the spin relaxation length is ca. exceeding 200 nm. Our finding, which counters the conventional understandings to d-electron 2DEGs, opens a new field of d-electron spintronics. Furthermore, this work highlights a novel spin function in the conductive oxide system.

Thioether‐Functionalized Quinone‐Based Resorcin[4]arene Cavitands: Electroswitchable Molecular Actuators

Abstract: a Laboratory of Organic Chemistry, ETH Zurich, Vladimir-Prelog-Weg 3, 8093 Zurich, Switzerland, e-mail: jovana.milic@epfl.ch; diederich@org.chem.ethz.ch b Laboratory of Photonics and Interfaces, Station 6, EPF Lausanne, CH-1015, Switzerland c Slovak University of Technology in Bratislava, Faculty of Chemical and Food Technology, Institute of Physical Chemistry and Chemical Physics, Radlinského 9, 812 37 Bratislava, Slovak Republic d Department of Physics and Center for Nanoscience (CeNS), Ludwig-Maximilians-Universität (LMU), Amalienstaße 54, 80799 Munich, Germany e Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 Munich, Germany f Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, CB3 0FS Cambridge, UK g Supramolecular Nano-Materials Laboratory, Institute of Material Science and Engineering, Station 12, MXG, EPF Lausanne, CH-1015, Switzerland h Université de Strasbourg, Laboratoire d’Électrochimie et de Chimie Physique du Corps Solide, Institut de Chimie de Strasbourg, 4 rue Blaise Pascal, CS 90032, 67081 Strasbourg, France

Non-symmorphic band degeneracy at the Fermi level in ZrSiTe

Abstract: Non-symmorphic materials have recently been predicted to exhibit many different exotic features in their electronic structures. These originate from forced band degeneracies caused by the non-symmorphic symmetry, which not only creates the possibility to realize Dirac semimetals, but also recently resulted in the prediction of novel quasiparticles beyond the usual Dirac, Weyl or Majorana fermions, which can only exist in the solid state. Experimental realization of non-symmorphic materials that have the Fermi level located at the degenerate point is difficult, however, due to the requirement of an odd band filling. In order to investigate the effect of forced band degeneracies on the transport behavior, a material that has such a degeneracy at or close to the Fermi level is desired. Here, we show with angular resolved photoemission experiments supported by density functional calculations, that ZrSiTe hosts several fourfold degenerate Dirac crossings at the X point, resulting from non-symmorphic symmetry. These crossings form a Dirac line node along XR, which is located almost directly at the Fermi level and shows almost no dispersion in energy. ZrSiTe is thus the first real material that allows for transport measurements investigating Dirac fermions that originate from non-symmorphic symmetry.