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Institution

Scuola superiore di Catania

About: Scuola superiore di Catania is a based out in . It is known for research contribution in the topics: Complex network & Graphene. The organization has 103 authors who have published 271 publications receiving 16218 citations.


Papers
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Journal ArticleDOI
TL;DR: The role of chaotic synchronization in the generation of the kinematics trajectory shows the discovering of new aesthetic features of the motion in mechanical control systems.

1 citations

Journal ArticleDOI
TL;DR: Your teachers and your colleagues have an essential role in helping you to determine your scientific interests and your way of doing research, says Giampaolo Pitruzzello.
Abstract: Your teachers and your colleagues have an essential role in helping you to determine your scientific interests and your way of doing research, says Giampaolo Pitruzzello.

1 citations

Proceedings ArticleDOI
11 Mar 2007
TL;DR: A set of simple, yet powerful, trust protocols, aimed at enforcing on a P2P network a boolean Code of Conduct verifiable by the network agents themselves, are introduced.
Abstract: To fight community abuse, we introduce in this paper a set of simple, yet powerful, trust protocols, aimed at enforcing on a P2P network a boolean Code of Conduct verifiable by the network agents themselves. Having a boolean Code of Conduct which honest agents never violate allows effective enforcing of it. A formal model for trust protocol definition and analysis is also defined, and properties of these protocols are formally defined and proved according to this model.

1 citations

Journal ArticleDOI
TL;DR: In this paper, the lateral uniformity of current transport at the interface between epitaxial graphene and 4H-SiC was investigated. And the role played by the C-rich buffer layer present at EG/4H -SiC interface and absent in the case of DG/4
Abstract: Conductive Atomic Force Microscopy was applied to study the lateral uniformity of current transport at the interface between graphene and 4H-SiC, both in the case of epitaxial graphene (EG) grown on the Si face of 4H-SiC and in the case of graphene exfoliated from HOPG and deposited (DG) on the same substrate. This comparison is aimed to investigate the role played by the C-rich buffer layer present at EG/4H-SiC interface and absent in the case of DG/4H-SiC. The distribution of the local Schottky barrier heights at EG/4H-SiC interface (Φ EG ) was compared with the distribution measured at DG/4H-SiC interface (Φ DG ), showing that Φ EG (0.36±0.1eV ) is ˜0.49eV lower than Φ DG (0.85 ± 0.06eV). This difference is explained in terms of the Fermi level pinning ˜0.49eV above the Dirac point in EG, due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the buffer layer.

1 citations

Journal ArticleDOI
TL;DR: In this paper, the authors applied computer simulation on the partial structure factor between ions (i) and valence electrons (v) for liquid Mg near freezing, to write the valence-valence partial structure factors in terms of and the neutron structure factor, to high accuracy.
Abstract: Egelstaff, March, and McGill (1973) proposed the extraction of electron correlation functions in liquids from scattering data. Here, we appeal to computer simulation by de Wijs et al. (1995) on the partial structure factor between ions (i) and valence electrons (v) for liquid Mg near freezing, to write the valence‒valence partial structure factor in terms of and the neutron structure factor , to high accuracy.

1 citations


Authors

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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20215
202010
20194
201810
20179
20168