N
N. Kirstaedter
Researcher at Technical University of Berlin
Publications - 22
Citations - 2895
N. Kirstaedter is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 13, co-authored 22 publications receiving 2835 citations.
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Journal ArticleDOI
Low threshold, large To injection laser emission from (InGa)As quantum dots
N. Kirstaedter,N. N. Ledentsov,Marius Grundmann,Dieter Bimberg,V. M. Ustinov,S. S. Ruvimov,Mikhail V. Maximov,Petr S. Kop'ev,Zh. I. Alferov,U. Richter,Peter Werner,Ulrich Gösele,J. Heydenreich +12 more
TL;DR: In this article, a low threshold, large T/sub o/ injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated, which are formed due to a morphological transformation of a pseudomorphic In/sub 0.5/Ga/sub0.5 /As layer.
Journal ArticleDOI
InGaAs-GaAs quantum-dot lasers
Dieter Bimberg,N. Kirstaedter,Nikolai N. Ledentsov,Zh. I. Alferov,Petr S. Kop'ev,Victor M. Ustinov +5 more
TL;DR: The InGaAs-GaAs QD emission can be tuned between 0.95 /spl mu/m and 1.37 /spl middot/cm/sup -2/m at 300 K as mentioned in this paper.
Journal ArticleDOI
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.
N. N. Ledentsov,Vitaly Shchukin,Marius Grundmann,N. Kirstaedter,J. Böhrer,Oliver G. Schmidt,Dieter Bimberg,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Sergey V. Zaitsev,N. Yu. Gordeev,Zh. I. Alferov,A. I. Borovkov,A. O. Kosogov,S. S. Ruvimov,Peter Werner,Ulrich Gösele,J. Heydenreich +19 more
TL;DR: In this paper, a laterally ordered array of nanoscale structures inserted in a GaAs matrix, where each structure is composed of several vertically merging InAs parts, was found to decrease the radiative lifetime and to result in low energy shifts of the corresponding peaks in luminescence and absorption spectra.
Journal ArticleDOI
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
N. Kirstaedter,Oliver G. Schmidt,Nikolai N. Ledentsov,Dieter Bimberg,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,Mikhail V. Maximov,P. S. Kop’ev,Zh. I. Alferov +9 more
TL;DR: In this paper, gain measurements and calculations for InAs/GaAs quantum dot injection lasers are presented and the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8(± 1)×104 cm−1 at 80 A cm−2.
Journal ArticleDOI
Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Frank Heinrichsdorff,Ming-Hua Mao,N. Kirstaedter,Alois Krost,Dieter Bimberg,A. O. Kosogov,Peter Werner +6 more
TL;DR: In this article, a quantum dot (QD) laser made of stacked InAs dots grown by metalorganic chemical vapor deposition (MVD) is reported. But the growth of defect-free binary InAs/GaAs QDs with high lateral density (dl⩾4×1010 cm−2) was achieved in a narrow growth parameter window.