Journal ArticleDOI
300 GHz InP HBT amplifier with 10 mW output power
TLDR
In this paper, a high-power terahertz solid-state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported.Abstract:
A high-power terahertz solid-state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μm. A significant amount of power of ∼10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.read more
Citations
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Journal ArticleDOI
H-Band Power Amplifier Integrated Circuits Using 250-nm InP HBT Technology
TL;DR: In this paper, three H-band power amplifier (PA) integrated circuits (ICs) are presented using 250-nm InP HBT technology, where a cascode topology was adopted to achieve high gain and high output power.
Journal ArticleDOI
A 220–320-GHz Vector-Sum Phase Shifter Using Single Gilbert-Cell Structure With Lossy Output Matching
TL;DR: In this paper, a single Gilbert-cell structure for vector modulation was proposed to reduce the output current combining ratio from 8:2 to 4:2, and boost the impedance at the combining node, thus facilitating wideband output matching at upper millimeter-wave and terahertz bands.
Journal ArticleDOI
Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology
TL;DR: In this article, the authors report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280-330 GHz frequency range.
Journal ArticleDOI
Design and Performance Analysis of THz Wireless Communication Systems for Chip-to-Chip and Personal Area Networks Applications
C. Yi,Dongkyo Kim,Sourabh Solanki,Jae-Hong Kwon,Moonil Kim,Sanggeun Jeon,Young-Chai Ko,Inkyu Lee +7 more
TL;DR: This paper develops two different chip sets for on-off-keying modulation based THz transceivers which include carrier generators, modulators, THz amplifiers, and baseband amplifiers and confirms the accuracy of the derived BER expression.
Journal ArticleDOI
A 6–10 mW Power Amplifier at 290–307.5 GHz in 250 nm InP HBT
TL;DR: In this paper, a 300 GHz power cascode cell topology with output power and output power density (W/mm) competitive with state-of-the-art PAs with 10 mW was presented.
References
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Journal ArticleDOI
A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module
Vesna Radisic,William R. Deal,Kevin M. K. H. Leong,Xiaobing Mei,W. Yoshida,Po-Hsin Liu,J. Uyeda,Andy Fung,Lorene Samoska,T. C. Gaier,Richard Lai +10 more
TL;DR: In this paper, a sub-millimeter wave solid-state power amplifier (SSPA) is implemented in coplanar waveguide (CPW) and uses an advanced high fMAX InP HEMT transistor with a sub 50-nm gate.
Journal ArticleDOI
220-GHz Solid-State Power Amplifier Modules
Vesna Radisic,Kevin M. K. H. Leong,Stephen Sarkozy,Xiaobing Mei,W. Yoshida,Po-Hsin Liu,William R. Deal,Richard Lai +7 more
TL;DR: This paper reports on several solid-state power amplifier modules operating at frequencies around the 220-GHz propagation window, including a single module demonstrating saturated output power ≥60 mW from 205 to 225 GHz and peak output power of 75 mW at 210 GHz using eight-way on-chip power combining.
Proceedings ArticleDOI
THz electronics projects at DARPA: Transistors, TMICs, and amplifiers
TL;DR: A technology base is being established to effectively generate, detect, process, and radiate sub-MMW frequencies to exploit this practically inaccessible frequency domain for imaging, radar, spectroscopy, and communications applications.
Proceedings ArticleDOI
220 GHz power amplifier testing at Northrop Grumman
TL;DR: In this paper, a 220 GHz power amplifier was demonstrated as part of the DARPA HiFIVE program, based on a folded waveguide circuit, and operates at 19 kV and 250 mA.
Journal ArticleDOI
A 325 GHz InP HBT Differential-Mode Amplifier
TL;DR: An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented in this article.