Proceedings ArticleDOI
A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sections
J. Aguirre,Calvin Plett +1 more
- Vol. 2, pp 923-926
TLDR
In this paper, a single-ended three-stage SiGe HBT distributed amplifier employing constant-k, m-derived filter sections in the output artificial transmission line is described.Abstract:
This paper describes a single-ended three-stage SiGe HBT distributed amplifier employing constant-k, m-derived filter sections in the output artificial transmission line. The distributed amplifier exhibits a measured passband of 100 MHz to 50 GHz, has a small die size (1.0 /spl times/ 1.1 mm/sup 2/) and low power consumption (125 mW). This amplifier is suitable for use in communication systems.read more
Citations
More filters
Dissertation
Contribution à la Conception de Circuits Microondes et Radiofréquences
TL;DR: In this paper, the authors expose deux themes de recherche (filtres multimodes en bande Ka and amplificateur de puissance de ondes travelling sur substrat silicium), sachant que j'aurai pu egalement evoquer le fait d'appliquer la methode des frequences reelles.
Journal ArticleDOI
50-GHz SiGe HBT distributed amplifiers employing constant-k and m-derived filter sections
J. Aguirre,Calvin Plett +1 more
TL;DR: In this paper, the authors describe two single-ended three-stage SiGe HBT distributed amplifiers employing constant-k filter sections, m-derived filter sections and a metal or a deep-trench ground plane in the artificial transmission lines.
Journal ArticleDOI
Broad-band MMICs based on modified loss-compensation method using 0.35-/spl mu/m SiGe BiCMOS technology
TL;DR: In this article, an HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented, achieving a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm2 including testing pads.
Journal ArticleDOI
A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique
Y. Inoue,Masaru Sato,Yoichi Kawano,S. Masuda,Toshihiro Ohki,K. Makiyarna,Tsuyoshi Takahashi,Hisao Shigematsu,Tatsuya Hirose +8 more
TL;DR: In this paper, the authors demonstrated a 90 GHz InP-HEMT lossy match amplifier (LMA) with a 20-dB gain for the first time, which is the smallest one ever reported for an over 80 GHz broadband amplifier.
Proceedings ArticleDOI
Gain bandwidth considerations in fully integrated distributed amplifiers implemented in silicon
TL;DR: It was found that the gain bandwidth product is limited to approximately 55% of the f/sub max/ of the gain stage used, which is a function of the choice of gain cell, quality of the passives, and the number of stages used.
References
More filters
Proceedings ArticleDOI
A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect
Alvin J. Joseph,Douglas D. Coolbaugh,Michael J. Zierak,Ryan Wayne Wuthrich,Peter J. Geiss,Z.X. He,Xuefeng Liu,Bradley A. Orner,Jeffrey B. Johnson,Gregory G. Freeman,David C. Ahlgren,Basanth Jagannathan,Louis D. Lanzerotti,Vidhya Ramachandran,J. Malinowski,H. Chen,Jack O. Chu,Peter B. Gray,R. Johnson,J. Dunn,S. Subbanna,Kathryn T. Schonenberg,David Harame,Robert A. Groves,K. Watson,D. Jadus,Mounir Meghelli,Alexander V. Rylyakov +27 more
TL;DR: IBM's next generation SiGe BiCMOS production technology targeted at the communications market is described and significant HBT performance enhancement compared to previously published results has been achieved through further collector and base profile optimization guided by process and device simulations.
Journal ArticleDOI
40 Gbit/s EAM driver IC in SiGe bipolar technology
TL;DR: In this article, an SiGe bipolar IC for directly driving a differential electroabsorption modulator (EAM) in a 40 Gbit/s fiber optic TDM system is presented.
Proceedings ArticleDOI
40 Gb/s 4:1 multiplexer and 1:4 demultiplexer IC module using SiGe HBTs
T. Masuda,Kenichi Ohhata,Nobuhiro Shiramizu,Eiji Ohue,Katsuya Oda,R. Hayami,Hiromi Shimamoto,M. Kondo,T. Harada,Katsuyoshi Washio +9 more
TL;DR: In this paper, a 4:1 multiplexer and a 1:4 demultiplexer IC module were developed by using 0.2 /spl mu/m self-aligned selective-epitaxial growth SiGe HBTs.
Journal ArticleDOI
SiGe regenerative frequency divider operating up to 63 GHz
TL;DR: A divide-by-two frequency divider has been developed and fabricated using SiGe bipolar production technology as mentioned in this paper, which has a wide frequency range, low power consumption and high input sensitivity.
Proceedings ArticleDOI
40 Gb/s analog IC chipset for optical receivers-AGC amplifier, full-wave rectifier and decision circuit implemented using self-aligned SiGe HBTs
TL;DR: The high performance SiGe HBT and optimized circuit configuration make possible an AGC amplifier with a 47.8 GHz bandwidth, a full-wave rectifier, and a decision circuit with 40 Gb/s operation.
Related Papers (5)
50-GHz SiGe HBT distributed amplifiers employing constant-k and m-derived filter sections
J. Aguirre,Calvin Plett +1 more