Open AccessProceedings Article
A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers
Axel Tessmann,Volker Hurm,Arnulf Leuther,Hermann Massler,Rainer Weber,M. Kuri,M. Riessle,H.-P. Stulz,M. Zink,Michael Schlechtweg,Oliver Ambacher,Tapani Narhi +11 more
- pp 220-223
TLDR
In this article, a low-noise amplifier based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm metamorphic high electron mobility transistors (mHEMTs) was developed.Abstract:
A compact H-band (220-325 GHz) low-noise amplifier circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm metamorphic high electron mobility transistors (mHEMTs). The realized four-stage cascode LNA achieved a small-signal gain of 31 dB at 243 GHz and more than 28 dB in the frequency range from 218 to 280 GHz. Coplanar topology in combination with cascode transistors resulted in a very compact die size of only 0.5 × 1.5 mm2. For low-loss packaging of the circuit, a set of waveguide-to-microstrip transitions has been realized on 50 μm thick GaAs substrates demonstrating an insertion loss of less than 0.5 dB at 243 GHz. The realized LNA module achieved a small-signal gain of 30.6 dB and a room temperature (T = 293 K) noise figure of 5.6 dB at the frequency of operation.read more
Citations
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Journal ArticleDOI
Pea-Sized mmW Transceivers: QFN-?Based Packaging Concepts for Millimeter-Wave Transceivers
TL;DR: In this article, the authors present a short overview of the topic and then present one particular approach in detail: the idea of integrating a complete mmW front end, including the antenna, into one small solderable surfacemount device (SMD).
Journal ArticleDOI
243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology
Axel Tessmann,Volker Hurm,Arnulf Leuther,Hermann Massler,Rainer Weber,M. Kuri,M. Riessle,H.-P. Stulz,M. Zink,Michael Schlechtweg,Oliver Ambacher,Tapani Narhi +11 more
TL;DR: In this article, two compact H-band low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35-nm metamorphic high electron mobility transistors (mHEMTs).
Proceedings ArticleDOI
A 170–280 GHz InP HEMT low noise amplifier
TL;DR: In this paper, the authors present on-wafer and packaged measurements of a broad-band 170-280 GHz low noise amplifier based on high frequency InP HEMT technology.
Journal ArticleDOI
H-Band Quartz-Silicon Leaky-Wave Lens With Air-Bridge Interconnect to GaAs Front-End
Marta Arias Campo,Katarzyna Holc,Rainer Weber,Carmine De Martino,Marco Spirito,Arnulf Leuther,Simona Bruni,Nuria Llombart +7 more
TL;DR: In this article, a new lens antenna in-package solution is presented for the H-band (220-320 GHz), including a wideband quartz-cavity leaky-wave feed combined with an air-bridge chip interconnect technology, based on spray coating and laser lithography.
Proceedings ArticleDOI
LNA modules for the WR4 (170–260 GHz) frequency range
Mikko Varonen,Lorene Samoska,Andy Fung,S. Padmanahban,Pekka Kangaslahti,Richard Lai,Stephen Sarkozy,Mary Soria,Heather R. Owen +8 more
TL;DR: In this article, the authors report on developments toward ultra-low noise amplifier modules for the WR4 frequency range, covering 170-260 GHz, using 35 nm HEMT transistors on a 50 μm thick InP substrate.
References
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Proceedings ArticleDOI
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
Richard Lai,X.B. Mei,William R. Deal,W. Yoshida,Y.M. Kim,Po-Hsin Liu,J. Lee,J. Uyeda,Vesna Radisic,M. Lange,T. C. Gaier,Lorene Samoska,A. Fung +12 more
TL;DR: In this article, the authors presented the latest advancements of sub 50 nm InGaAs/lnAIAS/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz.
Journal ArticleDOI
An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime
TL;DR: In this paper, the authors present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years.
Proceedings ArticleDOI
50 nm MHEMT Technology for G- and H-Band MMICs
Arnulf Leuther,Axel Tessmann,Michael Dammann,C. Schworer,Michael Schlechtweg,Michael Mikulla,R. Losch,G. Weimann +7 more
TL;DR: In this article, a metamorphic HEMT (MHEMT) MMIC is presented for circuit applications including circuit applications, and the devices are passivated with BCB and SiN to achieve a median time-to-failure of 2.7 times 106 h in air.
Proceedings ArticleDOI
A 300 GHz mHEMT amplifier module
Axel Tessmann,Arnulf Leuther,Volker Hurm,Hermann Massler,M. Zink,M. Kuri,M. Riessle,R. Losch,Michael Schlechtweg,Oliver Ambacher +9 more
TL;DR: In this paper, the authors presented the development of an H-band (220- 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz.
Journal ArticleDOI
A 245 GHz LNA in SiGe Technology
TL;DR: In this paper, a five-stage differential SiGe low noise amplifier (LNA) in cascode topology is presented, which has 18 dB gain at 245 GHz and a 3 dB bandwidth of 8 GHz.