Journal ArticleDOI
A comparative study of phase modulation in InGaAsP/InP and GaAs/AlGaAs based p-i-n and p-p-n-n structures
A. Bandyopadhyay,P.K. Basu +1 more
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TLDR
In this paper, a theoretical study of phase modulation in InGaAsP/InP and GaAs/AlGaAs double heterostructure waveguides in the p-i-n and p-p-n-n configurations at wavelengths of 1.3 and 1.55 mu m is reported.Abstract:
A theoretical study of the phase modulation in InGaAsP/InP and GaAs/AlGaAs double heterostructure waveguides in the p-i-n and p-p-n-n configurations at wavelengths of 1.3 and 1.55 mu m. is reported. The carrier-induced effects (plasma, band filling, and many body) and the field-induced effects (linear electrooptic and electro-refractive) are considered to calculate the change in the refractive index. Both structures made of InGaAsP/InP show higher modulation efficiency than the corresponding structures made of GaAs/AlGaAs in almost all the cases considered due to a larger index change in InGaAsP as its bandgap wavelength is closer to both 1.3 and 1.55 mu m. >read more
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DissertationDOI
Advanced indium-phosphide waveguide Mach-Zehnder interferometer all-optical switches and wavelength converters
TL;DR: In this paper, three possible concepts for very compact 1.30/1.55 μm WDM based on multimode interference (MMI) are discussed and first implementations are presented.
Journal ArticleDOI
Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers
Bassem Arar,Hans Wenzel,R. Güther,Olaf Brox,Andre Maaßdorf,Andreas Wicht,G. Erbert,Markus Weyers,Günther Tränkle,Harendra N. J. Fernando,Achim Peters +10 more
TL;DR: In this article, a GaAs/AlGaAs-based phase modulator for an operating wavelength of 780nm was presented for the first time, based on a P-p-i-n-N double heterostructure and features a waveguide with a vertical W-shaped index profile optimized for low propagation losses.
References
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Journal ArticleDOI
Electro‐optical light modulation in InGaAsP/InP double heterostructure diodes
TL;DR: The linear electrooptic coefficient r41 was determined in quaternary double heterostructure waveguides containing a p−n junction as mentioned in this paper, which strongly depends on the band gap and photon energy as does the associated electroabsorption effect.
Journal ArticleDOI
Influence of band-gap shrinkage on the carrier-induced refractive index change in InGaAsP
Dick Botteldooren,Roel Baets +1 more
TL;DR: In this article, the refractive index change induced by depletion of highly doped n-type InGaAsP materials is calculated and a new, numerically simple and accurate model for the high carrier density band-gap shrinkage is introduced.
Journal ArticleDOI
Phase modulation in GaAs/AlGaAs double heterostructures. I. Theory
Jérôme Faist,F. K. Reinhart +1 more
TL;DR: In this article, a systematic study of phase modulation in GaAs/AlGaAs double-heterostructure waveguides with different doping profiles was carried out, leading to interesting new results.
Journal ArticleDOI
The carrier effects on the change of refractive index for n‐type GaAs at λ=1.06,1.3, and 1.55 μm
H. C. Huang,S. Yee,M. Soma +2 more
TL;DR: In this paper, a numerical Kramers-Kronig analysis is used to calculate the refractive index change Δn caused by the injection/depletion of free carriers in various doped n-type GaAs.
Journal ArticleDOI
Orientation dependence of the phase modulation in a p‐n junction GaAs/AlxGa1−xAs waveguide
TL;DR: In this paper, phase modulation has been measured in a reverse-biased P−i−N GaAs/AlxGa1−xAs double heterostructure with heavily doped (N, P∼1018 cm−3) AlxGa 1 −xAs layers.