Journal ArticleDOI
Comparison of phase modulation of GaAs/AlGaAs double heterostructures
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TLDR
In this article, the performance of double-heterostructure GaAs/AlxGa1−xs phase modulators with different doping profiles is systematically compared and the largest phase modulation of l.75rad/V mm at a wavelength of 1.09μm was obtained with an active layer doped at n=3 × 1017cm−3.Abstract:
The performance of double-heterostructure GaAs/AlxGa1−xs phase modulators with different doping profiles are systematically compared. The largest phase modulation of l.75rad/V mm at a wavelength of 1.09μm was obtained with an active layer doped at n=3 × 1017cm−3. However, an intrinsic active layer gives the lowest characteristic modulation energy needed for high-frequency modulation.read more
Citations
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Journal ArticleDOI
Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator
TL;DR: In this paper, a P-p-i-n-N-N, GaAs-AlGaAs, TE/TM mode phase modulator was considered by incorporating p- and n-GaAs buffer layers and utilizing the higher order effects in these layers.
Journal ArticleDOI
Phase modulation in GaAs/AlGaAs double heterostructures. I. Theory
Jérôme Faist,F. K. Reinhart +1 more
TL;DR: In this article, a systematic study of phase modulation in GaAs/AlGaAs double-heterostructure waveguides with different doping profiles was carried out, leading to interesting new results.
Journal ArticleDOI
Multi‐gigahertz‐bandwidth intensity modulators using tunable‐electron‐density multiple quantum well waveguides
TL;DR: In this paper, the first measurement of modulation bandwidth in electron transfer quantum well modulators was reported, which indicated that the fundamental response time is determined by the voltage-dependent speed of carrier escape from the well.
Journal ArticleDOI
Phase modulation in GaAs/AlGaAs double heterostructures. II. Experiment
Jérôme Faist,F. K. Reinhart +1 more
TL;DR: In this article, the phase modulation in GaAs/AlxGa1−xAs double heterostructures with different doping profiles is systematically investigated and a good agreement between the experimental measurements and the theory developed in Part I of this paper is reported.
Journal ArticleDOI
Highly efficient separate-confinement PpinN GaAs/AlGaAs waveguide phase modulator
TL;DR: In this paper, a high-efficiency PpinN GaAs/AlGaAs waveguide phase modulator for high-speed operations was proposed. But the phase shift efficiency was not analyzed.
References
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Journal ArticleDOI
InGaAs/InP multiple quantum well waveguide phase modulator
TL;DR: In this article, a double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52 μm wavelength.