Journal ArticleDOI
Linearization Techniques for CMOS Low Noise Amplifiers: A Tutorial
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This tutorial catalogues and analyzes previously reported CMOS low noise amplifier (LNA) linearization techniques and highlights the impact of CMOS technology scaling on linearity and outlines how to design a linear LNA in a deep submicrometer process.Abstract:
This tutorial catalogues and analyzes previously reported CMOS low noise amplifier (LNA) linearization techniques. These techniques comprise eight categories: a) feedback; b) harmonic termination; c) optimum biasing; d) feedforward; e) derivative superposition (DS); f) IM2 injection; g) noise/distortion cancellation; and h) post-distortion. This paper also addresses broadband-LNA-linearization issues for emerging reconfigurable multiband/multistandard and wideband transceivers. Furthermore, we highlight the impact of CMOS technology scaling on linearity and outline how to design a linear LNA in a deep submicrometer process. Finally, general design guidelines for high-linearity LNAs are provided.read more
Citations
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Journal ArticleDOI
A Blocker-Tolerant, Noise-Cancelling Receiver Suitable for Wideband Wireless Applications
David Murphy,Hooman Darabi,Asad A. Abidi,Amr Amin Hafez,A. Mirzaei,Mohyee Mikhemar,Mau-Chung Frank Chang +6 more
TL;DR: A new wideband receiver architecture is proposed that employs two separate passive-mixer-based downconversion paths, which enables noise cancelling, but avoids voltage gain at blocker frequencies.
Book ChapterDOI
The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES
TL;DR: In this paper, an expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Journal ArticleDOI
A Wideband Class-AB Power Amplifier With 29–57-GHz AM–PM Compensation in 0.9-V 28-nm Bulk CMOS
Marco Vigilante,Patrick Reynaert +1 more
TL;DR: A wideband amplitude to phase (AM–PM) compensated class-AB power amplifier (PA) suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm CMOS without RF ultra-thick top metal.
Journal ArticleDOI
Analog Circuit Design Using Tunnel-FETs
TL;DR: It is shown that TFETs are promising for low-power and low-voltage designs, wherein transistors are biased at low-to-moderate current densities and more than an order of magnitude increase in their DC voltage gain.
Journal ArticleDOI
A Wideband Noise-Canceling CMOS LNA With Enhanced Linearity by Using Complementary nMOS and pMOS Configurations
TL;DR: A complementary noise-canceling CMOS low-noise amplifier (LNA) with enhanced linearity is proposed, while an active shunt feedback input stage offers input matching, while extended input matching bandwidth is acquired by a
References
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Journal Article
The design of CMOS radio-frequency integrated circuits, 2nd edition
TL;DR: This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Journal ArticleDOI
Wide-band CMOS low-noise amplifier exploiting thermal noise canceling
TL;DR: In this article, a feed-forward noise-canceling technique is proposed to cancel the noise and distortion contributions of the matching device, which allows for designing wide-band impedance-matching amplifiers with noise figure (NF) well below 3 dB.
Journal ArticleDOI
Wideband Balun-LNA With Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling
TL;DR: It is shown that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDs(V GS) relation at practical gain values.
Journal ArticleDOI
Modified derivative superposition method for linearizing FET low noise amplifiers
TL;DR: In this paper, a modified derivative-superposition (DS) method was proposed to increase the maximum IIP3 at RF frequencies, which was used in a 0.25mum Si CMOS low-noise amplifier (LNA) designed for cellular code-division multiple access receivers.
Journal ArticleDOI
A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation
TL;DR: A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented and is demonstrated to have a minimum internal gain of 14.5 dB.