Journal ArticleDOI
A detailed model to improve the radiation-resistance of Si space solar cells
Masafumi Yamaguchi,Aurangzeb Khan,Stephen J. Taylor,M. Imaizumi,Tadashi Hisamatsu,Sumio Matsuda +5 more
TLDR
In this article, an accurate radiation degradation model, based on measured radiation damage to devices and physical principles on radiation-induced defects in Si, has been established to improve the radiation-resistance of the Czochralski (CZ)-grown and floating-zone (FZ) grown single-crystal Si space solar cells.Abstract:
An accurate radiation degradation model, based on measured radiation damage to devices and physical principles on radiation-induced defects in Si, has been established to improve the radiation-resistance of the Czochralski (CZ)-grown and floating-zone (FZ)-grown single-crystal Si space solar cells. We have successfully carried out the optimization of radiation-resistant Si space solar cells by taking into account the effective base carrier concentration dependence of the most important analytical parameters, damage coefficient K/sub L/, for the minority-carrier diffusion length and carrier removal rate R/sub c/ for majority-carriers. The model can be used to adequately predict the radiation degradation of the Si solar cells irradiated with a complete spectrum of electron fluence. It has been established that the radiation-resistance of the silicon solar cell is very dependent on effective carrier concentration in the high fluence range and irradiation tolerance can be improved further by varying the base carrier concentration upon irradiation.read more
Citations
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Journal ArticleDOI
Effect of soiling on photovoltaic modules
Reinhart Appels,Buvaneshwari Lefevre,Bert Herteleer,Hans Goverde,Hans Goverde,Alexander Beerten,Robin Paesen,Klaas De Medts,Johan Driesen,Jef Poortmans +9 more
TL;DR: In this article, a variety of measurements were performed to determine the effect of dust settlement on the power output of photovoltaic modules in Belgium, and the physical properties of the collected dust were examined using a scanning electron microscope (SEM).
Journal ArticleDOI
Mechanical integrity of solution-processed perovskite solar cells
Nicholas Rolston,Brian L. Watson,Colin D. Bailie,Michael D. McGehee,João P. Bastos,Robert Gehlhaar,Jueng Eun Kim,Doojin Vak,Arun Tej Mallajosyula,Gautam Gupta,Aditya D. Mohite,Reinhold H. Dauskardt +11 more
TL;DR: In this article, the influence of materials selection, deposition techniques and processing variables on the mechanical stability of perovskite solar cells is investigated. But, the perovsites offered negligible resistance to fracture, failing cohesively below 1.5 J/m2.
Journal ArticleDOI
Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles
TL;DR: In this article, the degradation of a 3J solar cell can be predicted from the results of degradation level in the each subcell estimated from correlativity between NIEL and both radiation degradation parameters.
Journal ArticleDOI
A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices
J.R. Srour,James W. Palko +1 more
TL;DR: In this paper, a framework for understanding carrier generation and recombination mechanisms in irradiated silicon devices is presented, and the correlation of displacement damage effects with the rate of nonionizing energy loss (NIEL) is investigated.
Journal ArticleDOI
Experimental and theoretical radiation damage studies on crystalline silicon solar cells
Martín Alejo Alurralde,Mariana Julia Luisa Tamasi,C. J. Bruno,M.G. Martínez Bogado,Juan Carlos Plá,J. Fernández Vázquez,Jordi Duran,J. A. Schuff,A.A. Burlon,Pablo Stoliar,A.J. Kreiner +10 more
TL;DR: In this paper, an experimental facility was developed to asses in situ the degradation of crystalline silicon solar cells, fabricated by the Solar Energy Group of the National Atomic Energy Commission (CNEA), by measuring the currentvoltage characteristic curve.
References
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Book
Solar cell radiation handbook
H. Y. Tada,J. R. Carter +1 more
TL;DR: In this article, a handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented, where the interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced.
Proceedings ArticleDOI
PC1D version 4 for Windows: from analysis to design
Paul A. Basore,D.A. Clugston +1 more
TL;DR: A brief history of PC1D is presented, followed by an illustration of the new features available in version 4, with an emphasis on how these features make it not only possible to analyze solar cells, but to extend into the regime of design.
Journal ArticleDOI
Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation
TL;DR: In this paper, an anomalous increase in the short-circuit current Isc of n-on-p Si space solar cells, followed by an abrupt decrease in Isc and cell failure has been observed under high fluence (≳1016 cm −2) 1 MeV electron irradiation.
Journal ArticleDOI
Comparison of the effects of electron and proton irradiation on n+–p–p+ silicon diodes
S. J. Taylor,Masafumi Yamaguchi,T. Yamaguchi,S. Watanabe,K. Ando,Sumio Matsuda,T. Hisamatsu,S. I. Kim +7 more
TL;DR: After irradiation with high fluences of electrons or protons, the effective carrier concentration in the base of the diodes was reduced dramatically, an effect referred to as “carrier removal,” and the effects upon the device parameters, in particular, the series resistance and saturation current, are discussed in detail.
Journal ArticleDOI
Effect of electron energy on defect introduction in silicon
TL;DR: In this article, the energy dependence of the defect introduction rates of the Ec−0·17 eV, Ec− 0·4 eV and Ev + 0·3 eV levels has been determined using Hall effects measurements.