Proceedings ArticleDOI
A new generation of power unipolar devices: the concept of the FLoating islands MOS transistor (FLIMOST)
N. Cezac,F. Morancho,P. Rossel,H. Tranduc,A. Payre-Lavigne +4 more
- pp 69-72
Reads0
Chats0
TLDR
In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region, which exhibits improved on-state performance when compared to the conventional VDMOST.Abstract:
In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region. This new structure, called "FLIMOST", exhibits improved on-state performance when compared to the conventional VDMOST. For instance, for a breakdown voltage of 900 Volts, the performance is strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOST family are determined and compared to those of the "Superjunction" MOS Transistor family: this comparison shows the strong interest of the FLIMOSFET in the 200 V-1000 V breakdown voltage range.read more
Citations
More filters
Patent
Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
TL;DR: In this article, a power semiconductor device and a method of forming the same by providing a substrate (402) and then forming a voltage sustaining region on the substrate by depositing an epitaxial layer (401), and forming at least one trench in the epitaxia layer.
Patent
Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
TL;DR: In this article, a method for forming a power semiconductor device with a first conductivity type and forming a voltage sustaining region on the substrate is described, where the dopant is diffused in the annular doped regions and the another doped region to cause the regions to overlap one another, whereby a continuous doped column is formed in the epitaxial layer.
Patent
Method for fabricating a high voltage power mosfet having a voltage sustaining region that includes doped columns formed by rapid diffusion
TL;DR: In this paper, a method of fabricating a high voltage power MOSFET having a voltage-sustaining region that includes doped columns (410) formed by rapid diffusion is presented.
Patent
High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
TL;DR: In this article, a voltage sustaining region is formed by depositing an epitaxial layer of polysilicon having a second dopant of the second conductivity type in the trench.
Patent
Power diode having improved on resistance and breakdown voltage
Vladimir Rodov,Paul Chang,Jianren Bao,Wayne Y. W. Hsueh,Arthur Ching-Lang Chiang,Geeng-Chuan Chern +5 more
TL;DR: In this article, a two-terminal power diode has improved reverse bias breakdown voltage and on resistance includes a semiconductor body having two opposing surfaces and a superjunction structure there between, the structure including a plurality of alternating P and N doped regions aligned generally perpendicular to the two surfaces.
References
More filters
Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Theory of Semiconductor Superjunction Devices
TL;DR: In this article, a new theory of semiconductor devices, called "semiconductor superjunction (SJ) theory", is presented, which utilizes a number of alternately stacked, p-and n-type, heavily doped, thin semiconductor layers.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP
Simon M. Sze,G. Gibbons +1 more
Journal ArticleDOI
A new vertical power MOSFET structure with extremely reduced on-resistance
D. Ueda,H. Takagi,Gota Kano +2 more
TL;DR: In this paper, a rectangular-grooved MOSFET (RMOS) was proposed, in which the vertical channels are provided along the sidewalls of the rectangular grooves formed by a reactive ion-beam etching (RIBE) technique.