Journal ArticleDOI
A novel wide dynamic range silicon photodetector and linear imaging array
S.G. Chamberlain,J.P.Y. Lee +1 more
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TLDR
In this article, a novel silicon solid-state photodetector structure utilizing the MOSFET subthreshold effect was conceived, developed, fabricated, and experimental results were obtained.Abstract:
A novel silicon solid-state photodetector structure utilizing the MOSFET subthreshold effect was conceived, developed, fabricated, and experimental results were obtained. This photodetector device, which can be integrated on the same chip with MOSFET circuits or CCD's, provides an analog voltage signal over a wide dynamic range. Fabricated photodetector devices and arrays showed experimentally, in the visible spectrum, an incoming radiation detection light intensity dynamic range of greater than 107. In addition, the novel photodetector device was used to realize CCD and self-scanned MOSFET linear arrays. In this paper, we describe in detail the theory of the new photodetector device and its applications to form linear imaging arrays. Finally, we present experimental results obtained on developed and fabricated devices and arrays.read more
Citations
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Robust license-plate recognition method for passing vehicles under outside environment
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Extended Dynamic Range From a Combined Linear-Logarithmic CMOS Image Sensor
TL;DR: A CMOS image sensor that can operate in both linear and logarithmic mode is described, and a novel on-chip method of deriving a reference point has been implemented that addresses the problems of high fixed pattern noise, slow response time, and low signal-to-noise ratio (SNR) in logarithsmic mode.
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Advanced channelization for RF, microwave, and millimeterwave applications
TL;DR: In this article, the authors discuss the channelization function, the parallel signal processing techniques used in channelizers, the signal processing functions, and the critical channelizer parameters, and tradeoffs at the receiver and channelizer technology levels.
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Image sensor array with threshold voltage detectors and charged storage capacitors
TL;DR: In this paper, a wide dynamic range sensor employing simple sensing circuitry formed on a single chip provides accurate measurements of an incoming signal capable of varying over a wide range of dynamic ranges.
References
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Journal ArticleDOI
Photosensitivity and Scanning of Silicon Image Detector Arrays
TL;DR: The first part of this paper deals with the basic photodiode unit, its principle of operation, and the factors that affect thePhotodiode and array sensitivity.
Journal ArticleDOI
A calibrated model for the subthreshold operation of a short channel MOSFET including surface states
D.B. Scott,S.G. Chamberlain +1 more
TL;DR: A simple two-dimensional subthreshold model for short channel MOSFET's using a regional charge density approximation in the solution of Poisson's equation and an analytical solution of the continuity equation in two dimensions was derived.
Journal ArticleDOI
A multiple-gate CCD-photodiode sensor element for imaging arrays
J.M. White,S.G. Chamberlain +1 more
TL;DR: In this article, a sixteen element 4-phase, 2-level polysilicon CCD imager was designed, fabricated, and used to test the improved photoelement structure.
Journal ArticleDOI
Modeling and experimental simulation of the low-frequency transfer inefficiency in bucket-brigade devices
D.B. Scott,S.G. Chamberlain +1 more
TL;DR: After proving both theoretically and experimentally that the low-frequency transfer inefficiency of BBD devices is due to subthreshold current, this work successfully used this knowledge to design an improved BBD device, which includes only one extra ion-implantation step relative to the originalBBD device.