Agglomeration of copper thin film in Cu/Ta/Si structure
TLDR
In this article, the surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively.Abstract:
Copper agglomeration in Cu(100nm)/Ta(50urn)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650°C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.read more
Citations
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Thermal Atomic Layer Etching of Copper by Sequential Steps Involving Oxidation and Exposure to Hexafluoroacetylacetone
Elham Mohimi,Xiaoqing I. Chu,Brian B. Trinh,Shaista Babar,Gregory S. Girolami,John R. Abelson +5 more
TL;DR: An atomic layer etching (ALE) method for copper that involves cyclic exposure to an oxidant and hexafluoroacetylacetone (Hhfac) at 275˚C was described in this article.
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Metallic Copper Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition of Air Stable Precursors
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Surface Chemical Composition and Morphology
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TL;DR: In this article, methods for cleaning and passivating silicon surfaces and some of the metrology used to characterize them are reviewed and the effects of cleaning procedures on the surface morphology and the interface stability in different environments are discussed.
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Synthesis of nanostructured amorphous carbon-copper composite films by plasma-enhanced chemical vapour deposition
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References
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Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
TL;DR: The interaction of Cu with Si separated by thin (50 nm) layers of tantalum, Ta2N, and a nitrogen alloy of Ta has been investigated to determine the factors that affect the success of these materials as diffusion barriers to copper.
Book
Diffusion of metals in silicon dioxide
TL;DR: In this paper, bias temperature stress (BTS) was used to investigate the diffusion coefficient and solubilities of several metals (Ag, Cu, Au, Pd, and Ti) using the candidate metal as the electrode.
Journal ArticleDOI
Advanced multilayer metallization schemes with copper as interconnection metal
TL;DR: A review of progress made in addressing the first two schemes together with a brief discussion of the third can be found in this paper, where the authors present a review of the progress made.
Journal ArticleDOI
Copper transport in thermal SiO2
TL;DR: In this article, the penetration time for copper through the oxide was characterized as a function of temperature and applied electric field, and the role of a titanium layer between the copper and oxide was also studied.
Journal ArticleDOI
The instability of polycrystalline thin films: Experiment and theory
TL;DR: In this article, a pyrolysis of zirconium acetate precursor films, which were deposited on single crystal Al2O3 substrates by spin-coating aqueous solutions of ZrO2 and yttrium nitrate, was investigated to determine the mechanism that causes the polycrystalline film to uncover the substrate.