Journal ArticleDOI
An experimental and theoretical study of the formation and microstructure of porous silicon
TLDR
In this paper, the formation and properties of porous silicon formed by anodising silicon under a wide range of conditions were investigated and the currentvoltage characteristics of the silicon-hydrofluoric acid system were presented.About:
This article is published in Journal of Crystal Growth.The article was published on 1985-12-01. It has received 477 citations till now. The article focuses on the topics: Nanocrystalline silicon & Porous silicon.read more
Citations
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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Journal ArticleDOI
The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Journal ArticleDOI
Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
TL;DR: In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.
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Visible light emission due to quantum size effects in highly porous crystalline silicon
A. G. Cullis,Leigh T. Canham +1 more
TL;DR: In this paper, the structure of the porous layers that emit red light under photoexcitation was revealed, which constitutes direct evidence that highly porous silicon contains quantum-size crystalline structures responsible for the visible emission.
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Porous silicon: a quantum sponge structure for silicon based optoelectronics
TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
References
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Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
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Microstructure and formation mechanism of porous silicon
TL;DR: In this paper, the effects of silicon dopant type, resistivity, current density, and hydrofluoric acid concentration on the formation and properties of porous silicon were investigated using cross-section transmission electron microscopy.
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A new dielectric isolation method using porous silicon
TL;DR: In this article, a new dielectric isolation technology is proposed based on the following characteristics of the porous silicon oxide formation: (1) p -type Si is more easily changed to porous silicon than n-type Si; (2) porous silicon is formed along the anodic reaction current flow line; (3) the change in volume of porous silicon after oxidation is relatively small; and (4) thick porous silicon films (10 μm) can be obtained easily.
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X‐ray double crystal diffraction study of porous silicon
TL;DR: In this article, two distinct types of porous silicon can be formed during the anodization of silicon in hydrofluoric acid, depending on the dopant concentration, and the interplanar spacing of the porous film is identical to that of the substrate but is increased in the direction normal to it.
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Oxidation of Porous Silicon and Properties of Its Oxide Film
TL;DR: In this article, the mechanism of oxidation of a porous silicon layer (PSL) was studied by examining the oxidation progress, the temperature dependence of the oxidation and the infrared absorption spectra.