Journal ArticleDOI
An MOS transistor charge model for VLSI design
Bing J. Sheu,W.-J. Hsu,P.K. Ko +2 more
Reads0
Chats0
TLDR
The development of an MOS transistor charge and capacitance model for the analysis and design of VLSI circuits is described and results compare well with experimental data for transistors with channel lengths as small as 0.75 mu m.Abstract:
The development of an MOS transistor charge and capacitance model for the analysis and design of VLSI circuits is described. The total stored charge in each of the gate, bulk, and channel regions is obtained by integrating the distributed charge densities over the thin-oxide area. Charge conservation is guaranteed in this model by using the terminal charges as the state variables. The capacitance expressions have the nonreciprocal property. Partition of channel charge into the drain and source components is 40/60 in the saturation region. In the triode region, this partition changes asymptotically to 50/50 as the gate voltage increases. The carrier-velocity saturation effect is incorporated through both the modification of channel quasi-Fermi level and the determination of drain saturation voltage. Implementation of the model in the SPICE circuit simulator has been achieved. Modeled results compare well with experimental data for transistors with channel lengths as small as 0.75 mu m. >read more
Citations
More filters
Proceedings ArticleDOI
Testing oriented analysis of CMOS ICs with opens
Wojciech Maly,P. K. Nag,P. Nigh +2 more
TL;DR: It is shown that functional faults caused by opens, i.e. by regions with missing material, cannot be modeled well by a transistor stuck-open, and that the majority of opens which occur in CMOS static circuits manifest themselves as timing faults.
Journal ArticleDOI
A high-precision VLSI winner-take-all circuit for self-organizing neural networks
Joongho Choi,Bing J. Sheu +1 more
TL;DR: In this article, the design and implementation of a high-precision VLSI winner-take-all (WTA) circuit that can be arranged to process 1024 inputs are presented.
Journal ArticleDOI
A programmable analog VLSI neural network processor for communication receivers
J. Choi,S.H. Bang,Bing J. Sheu +2 more
TL;DR: An analog VLSI neural network processor was designed and fabricated for communication receiver applications and performed by the modified Kalman neuro-filtering algorithm to speed up the convergence process for intersymbol interference and white Gaussian noise communication channels.
Journal ArticleDOI
Voltage- and current-based fault simulation for interconnect open defects
TL;DR: A highly accurate and efficient fault simulator for interconnect opens in combinational or full-scan digital CMOS circuits and can simulate test vectors for both voltage and current measurements is described.
Journal ArticleDOI
A table lookup FET model for accurate analog circuit simulation
A. Rofougaran,A.A. Abidi +1 more
TL;DR: A table-based approach to the empirical modeling off FETs in circuit simulators addresses the specific requirements of analog circuit design, such as accuracy in reproducing small-signal parameters, large signal nonlinearities, subthreshold characteristics, substrate effects, short-channel effects, and voltage dependent capacitances.
References
More filters
Journal ArticleDOI
BSIM: Berkeley short-channel IGFET model for MOS transistors
TL;DR: The Berkeley short-channel IGFET model (BSIM) as discussed by the authors is an accurate and computationally efficient MOS transistor model, and its associated characterization facility for advanced integrated-circuit design is described.
Journal ArticleDOI
Modeling and simulation of insulated-gate field-effect transistor switching circuits
H. Shichman,David A. Hodges +1 more
TL;DR: A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described, particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits.
Journal ArticleDOI
A charge-oriented model for MOS transistor capacitances
D.E. Ward,Robert W. Dutton +1 more
TL;DR: A new model for computer simulation of capacitance effects in MOS transistors is presented, which guarantees conservation of charge and includes bulk capacitances.
Journal ArticleDOI
Switch-induced error voltage on a switched capacitor
Bing J. Sheu,Chenming Hu +1 more
TL;DR: In this paper, a concise analytical expression for switch-induced error voltage on a switched capacitor is derived from the distributed MOSFET model, which can be interpreted in terms of a simple lumped equivalent circuit.