Journal ArticleDOI
Analysis of two‐step‐growth conditions for GaN on an AlN buffer layer
Toru Sasaki,Takashi Matsuoka +1 more
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TLDR
In this paper, the effects of various growth conditions on the surface morphology and the layer properties of GaN were compared between two-step growth and direct growth to study the effect of different growth conditions, and it was found that conditions that stabilize the GaN(0001) surface serve as guidelines for obtaining mirrored surfaces, and raising GaN growth temperature improves crystallographic, electrical, and luminescence properties.Abstract:
Gallium nitride is grown by metalorganic vapor phase epitaxy with and without a low‐temperature‐grown AlN buffer layer. Variations in the surface morphology and the layer properties are compared between two‐step growth and direct growth to study the effects of various growth conditions. It is found that (i) conditions that stabilize the GaN(0001) surface serve as guidelines for obtaining mirrored surfaces, and (ii) raising GaN growth temperature improves crystallographic, electrical, and luminescence properties of GaN. The observed improvement in the layer properties with increase in GaN growth temperature suggests that increasing N2 dissociation pressure does not affect GaN properties. GaN growth conditions are analyzed thermodynamically to show that NH3 in the growth ambients has the potential to suppress thermal dissociation of GaN.read more
Citations
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Journal ArticleDOI
Growth of Group III Nitrides. A Review of Precursors and Techniques
TL;DR: In this paper, the authors discuss improvement in film properties as a function of growth chemistry and focus on MOCVD precursors used specifically for the growth of group III (Al, Ga, In) nitride films.
Journal ArticleDOI
Growth model for GaN with comparison to structural, optical, and electrical properties
TL;DR: In this article, a kinetic model is presented to explain the metal organic vapor phase epitaxy (MOVPE) growth of GaN, based upon measured desorption rates and assumptions on the precursor dissociation and sticking probabilities.
Journal ArticleDOI
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
S. M. Ting,J. C. Ramer,D. I. Florescu,V. N. Merai,B. E. Albert,A. Parekh,D. S. Lee,D. Lu,D. V. Christini,L. Liu,Eric A. Armour +10 more
TL;DR: In this article, the morphological evolution of InGaN/GaN multiple-quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been examined by atomic force microscopy and cross-sectional transmission electron microscopy.
Journal ArticleDOI
AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
TL;DR: In this paper, a single temperature process using AlGaN nucleation layers has been developed that produces device-quality, GaN-based materials with bilayer step surfaces, where the GaN layer is deposited by flow modulation organometallic vapor phase epitaxy at temperatures in excess of 1000°C.
Journal ArticleDOI
Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation
TL;DR: A personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs is given in this article.
References
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Journal ArticleDOI
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
Journal ArticleDOI
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
Journal ArticleDOI
The preparation and properties of vapor- deposited single-crystalline GaN
H. P. Maruska,J. J. Tietjen +1 more
TL;DR: Vapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc as mentioned in this paper, were tested for testing the properties of single crystals.
Journal ArticleDOI
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
TL;DR: In this article, a thin AIN buffer layer was proposed to reduce the microscopic fluctuation in crystallite orientation and improve the crystalline quality of the GaN and Ga 1−x Al x N (0 x ≦ 0.4) films.