Array concepts for solid-state and vacuum microelectronics millimeter-wave generation
TLDR
In this article, the authors proposed to use two-dimensional grids with oscillators and multipliers for quasi-optical coherent spatial combining of the outputs of large numbers of low-power devices.Abstract:
The authors have proposed that the increasing demand for contact watt-level coherent sources in the millimeter- and submillimeter-wave region can be satisfied by fabricating two-dimensional grids loaded with oscillators and multipliers for quasi-optical coherent spatial combining of the outputs of large numbers of low-power devices. This was first demonstrated through the successful fabrication of monolithic arrays with 2000 Schottky diodes. Watt-level power outputs were obtained in doubling to 66 GHz. In addition, a simple transmission-line model was verified with a quasi-optical reflectometer that measured the array impedance. This multiplier array work is being extended to novel tripler configurations using blocking barrier devices. The technique has also been extended to oscillator configurations where the grid structure is loaded with negative-resistance devices. This was first demonstrated using Gunn devices. More recently, a 25-element MESFET grid oscillating at 10 GHz exhibited power combining and self-locking. Currently, this approach is being extended to a 100-element monolithic array of Gunn diodes. This same approach should be applicable to planar vacuum electron devices such as the submillimeter-wave BWO (backward wave oscillator) and vacuum FET. >read more
Citations
More filters
Journal ArticleDOI
Extending the two-dimensional FDTD method to hybrid electromagnetic systems with active and passive lumped elements
TL;DR: In this paper, the authors extended the FDTD method to include distributed electromagnetic systems with lumped elements (a hybrid system) and voltage and current sources, and derived FDTD equations that include nonlinear elements like diodes and transistors.
Journal ArticleDOI
Phased array operation of a diode grid impedance surface
TL;DR: In this article, the capability of the Schottky varactor diode arrays to steer, focus, and change the polarization state of a beam was demonstrated for the first time.
Proceedings Article
Submillimeter waves
TL;DR: A short survey of the needs, results, and new possibilities of generating submillimeter waves is given in this article, where a short survey is given of the current state of the art in this field.
Journal ArticleDOI
An impedance model for the quasi-optical diode array
L.B. Sjogren,N.C. Luhmann +1 more
TL;DR: In this paper, a circuit representation for the quasi-optical impedance of an infinite array of strips or slots periodically loaded with two terminal semiconductor devices (diode arrays) is presented.
Journal ArticleDOI
Wideband Power Combining of Four Microfabricated W-Band Traveling-Wave Tubes
Shaomeng Wang,Sheel Aditya +1 more
TL;DR: In this article, a planar helix slow-wave structure (SWS) with straight-edge connections (PH-SEC) is proposed for wideband power combining of four W-band microfabricated traveling-wave tubes (TWTs) with stripline input-output feed.
References
More filters
Journal ArticleDOI
Conversion Loss and Noise of Microwave and Millimeterwave Mixers: Part 1--Theory
D.N. Held,Anthony R. Kerr +1 more
TL;DR: In this article, the effects of nonlinear capacitance, arbitrary embedding impedances, nonideality of microwave diodes, and shot, thermal, and scattering noise generated in the diode were analyzed for microwave and millimeter-wave mixers.
Journal ArticleDOI
Millimeter-wave diode-grid phase shifters
TL;DR: In this article, a simple transmission-line grid model and measured low-frequency parameters for the diodes were used to predict the measured performance over the entire capacitive bias range of the Diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies form 33 GHz to 141 GHz.
Journal ArticleDOI
Millimeter-wave diode-grid frequency doubler
TL;DR: In this article, a monolithic diode grid was fabricated on 2-cm/sup 2/ gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept.
Proceedings ArticleDOI
A vacuum field effect transistor using silicon field emitter arrays
TL;DR: In this paper, the authors present results taken from the first planar silicon field emitter array vacuum field effect transistor (VFE transistor), which replaces the solid channel region of a standard silicon FET with the vacuum.
Proceedings ArticleDOI
Vacuum integrated circuits
TL;DR: There is a rebirth of interest in vacuum electronics for special purpose signal and data processing, based on specific advantages of the vacuum as a device medium, but also on the applicability of solid state fabrication technology to vacuum device and circuit concepts.