Journal ArticleDOI
Band gap and intergrain barrier activation energies in Bi90Sb10 thin films
V. Damodara Das,M.S. Jagadeesh +1 more
TLDR
In this paper, electrical resistivity and Hall effect measurements have been made on vacuum evaporated Bi 90 Sb 10 alloy films of various thickness (350 A to 4500 A), in the temperature range of 77 to 510 K.About:
This article is published in Materials Research Bulletin.The article was published on 1981-12-01. It has received 10 citations till now. The article focuses on the topics: Band gap & Activation energy.read more
Citations
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Journal ArticleDOI
Electrooptic properties of polycrystalline SnSe thin films
TL;DR: In this article, it was observed from the studies of electrical resistivity of films of SnSe of different thicknesses and substrate temperatures that resistivity decreases with increase in thickness and substrate temperature.
Journal ArticleDOI
Semiconducting behavior of Ag2Te thin films and the dependence of band gap on thickness
V. Damodara Das,D. Karunakaran +1 more
TL;DR: In this paper, the electrical resistance of Ag2Te films has been measured as a function of temperature during heating, which was carried out immediately after the film formation, and the observed exponential decrease of resistance with temperature up to the transition point points to the semiconducting nature of the low temperature polymorph of ag2Te.
Journal ArticleDOI
Structural, optical and photoelectrical properties of vacuum evaporated Cd0.3Sn0.7Se thin films
TL;DR: Polycrystalline thin films were prepared in four different thicknesses on glass substrates by vacuum evaporation technique at room temperature and subsequently annealed in air at 300 °C for 2 h.
Journal ArticleDOI
Influence of heat treatment on the structural, optical and electrical properties of Cd20Sn10Se70 thin films
TL;DR: The effect of annealing temperature (Ta) on the structural, optical, and electrical properties of thermally evaporated Cd20Sn10Se70 thin films has been investigated in this paper.
Journal ArticleDOI
Optical properties of vacuum evaporated CdxSn1−xSe polycrystalline thin films: influence of composition and thickness
TL;DR: In this article, optical transmittance measurements have been made on thin films of CdxSn1−xSe, with x = 0, 0.3, 0.75 and 1 for various thicknesses.
References
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Journal ArticleDOI
Temperature Dependence of the Electrical Properties of Bismuth-Antimony Alloys
TL;DR: The electrical resistivity and Hall effect of zone-levelled single crystals of Bi-Sb alloys have been measured in the temperature range from 4.2 to 300 K as discussed by the authors.
Journal ArticleDOI
Barrier Theory of the Photoconductivity of Lead Sulfide
TL;DR: In this paper, the barrier theory of the infrared photoconductivity of PbS films is discussed, according to which the high resistance of the films arises from $n √ √ n √ ϵ barrier at the surfaces between the crystallites forming the films, the barriers being formed in the oxidizing process used in preparing the films.
Journal ArticleDOI
Mechanism of Photoconductivity in Chemically Deposited Lead Sulfide Layers
TL;DR: In this paper, the authors investigated the mechanism of photoconductivity in chemically deposited PbS layers and showed that the photoexcitation and photoadsorption of oxygen are similar, and they may be described in terms of the same inhomogeneous model.
Related Papers (5)
Semiconducting behavior of Ag2Te thin films and the dependence of band gap on thickness
V. Damodara Das,D. Karunakaran +1 more