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Journal ArticleDOI

Boundary Effects in Superconductors

P. G. de Gennes
- 01 Jan 1964 - 
- Vol. 36, Iss: 1, pp 225-237
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TLDR
In this paper, the properties of layered structures of superconducting (and non-superconducting) materials are studied, with emphasis on the related boundary value problems, and theoretical interpretations are proposed for them.
Abstract
The properties of layered structures of superconducting (and non- superconducting) materials are studied, with emphasis on the related boundary- value problems. The experimental results are summarized, and theoretical interpretations are proposed for them. (T.F.H.)

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Journal ArticleDOI

On the microscopic theory of the proximity effect in normal metal-superconductor sandwiches

A.D. Zaikin, +1 more
- 09 May 1983 - 
TL;DR: In this article, a theory of the proximity effect in clean normal metal-superconductor sandwiches at low temperatures T ⪡ T c was developed, and it was shown that the value of the superconducting order parameter near the NS-interface is equal to nearly half of its value Δ 0 far from the NSinterface.
Journal ArticleDOI

Superconductivity in ultrathin films

TL;DR: In this article, it was shown that the pair breaking parameter of the Maki-Thompson contributions to the fluctuation conductivity above the superconducting transition temperature has the same thickness dependence as the transition temperature depression in very thin amorphous Be-Al films.
Patent

Magnetic topological nanowires

TL;DR: In this paper, a magnetic topological nanowire structure consisting of a superconductor and a quasi-1D magnetic nanowires is described, where each of the pair of Majorana fermions corresponds to the topological superconductor and each of them are localized near a respective endpoint of the nanowired.
Journal ArticleDOI

Reflectionless tunneling due to Andreev reflection in a gated superconductor–semiconductor junction

TL;DR: In this paper, the differential resistance in a gated superconductor-semiconductor junction in the ballistic transport regime was studied and it was shown that the conductance enhancement due to coherent Andreev reflection is controlled by the gate voltage which changes the transparency of the gate barrier.