Proceedings ArticleDOI
Broadband high PAE GaN push-pull power amplifier for 500MHz to 2.5 GHz operation
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TLDR
In this article, a broadband push-pull power amplifier with power added efficiency (PAE) greater than 47% from 500 MHz to 25 GHz was reported. But the power amplifier was designed to employ a load impedance of 25Ω without any reactive matching.Abstract:
A broadband push-pull power amplifier with power added efficiency (PAE) greater than 47% from 500 MHz to 25 GHz is reported The power amplifier comprises two GaN integrated circuits whose outputs are combined with a broadband balun to achieve power up to 20W Each IC contains two stacked GaN HEMTs and is designed to employ a load impedance of 25Ω without any reactive matching in order to achieve broadband operation To provide a better input impedance match to 25Ω and to reduce gain variation over frequency, an RC feedback network is used Measurements, under CW excitation, demonstrated greater than 63% power added efficiency at select frequencies and greater than 47% over the entire bandwidthread more
Citations
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Journal ArticleDOI
An 85-W Multi-Octave Push–Pull GaN HEMT Power Amplifier for High-Efficiency Communication Applications at Microwave Frequencies
TL;DR: In this article, the authors proposed a design methodology for multi-octave planar push-pull power amplifiers (PPPAs) to tackle the challenges associated with the integration of planar balanced to unbalanced transformers (baluns) with packaged transistors characterized by significant parasitics.
Journal ArticleDOI
A Series-Connected-Load Doherty Power Amplifier With Push–Pull Main and Auxiliary Amplifiers for Base Station Applications
Ayman Jundi,Slim Boumaiza +1 more
TL;DR: A new approach for designing high-power Doherty power amplifiers (DPAs) with extended bandwidth is proposed and a low-loss planar balanced-to-unbalanced transformer (balun)-based combiner network is utilized to realize the DPA series-connected combiner while absorbing the transistor’s parasitics.
Journal ArticleDOI
A 20-W Wide Bandwidth GaN HEMT Power Amplifier for VHF/UHF Applications
Jusung Kim,Younghoon Kim,Seongwon Oh,Jaehyung Choi,Dong-Ho Lee,Kunhee Cho,Sanghun Lee,Chi-Hyung Ahn +7 more
TL;DR: Shunt-feedback and push–pull realization provide the robust broad bandwidth covering very high frequency and low-frequency ultra high frequency (UHF) bands and the benefit due to the feedback presented in the form of shunt–shunt network on power amplifier module provides the linear and broadband frequency amplification.
Proceedings ArticleDOI
All gallium nitride envelope-tracking multiband power amplifier using 200MHz switching buck-converter
Takanobu Fujiwara,Kenji Mukai,Hideyuki Nakamizo,Shintaro Shinjo,Jonmei J. Yan,Hamed Gheidi,Peter M. Asbeck +6 more
TL;DR: In this article, a multiband Envelope-Tracking (ET) Power Amplifier (PA) with a very broadband RF-PA stage and a Voltage-Mode class-D (VMCD) buck-converter with 200MHz switching frequency was reported.
Journal ArticleDOI
A Wideband Isolated Real-to-Complex Impedance Transforming Uniplanar Microstrip Line Balun for Push–Pull Power Amplifier
TL;DR: A three-port uniplanar microstrip line balun is proposed to transform the balanced complex load termination to 50- $\Omega $ unbalanced port impedance to prove the design concept.
References
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Journal ArticleDOI
Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier
TL;DR: In this article, the design, implementation, and experimental results of a high-efficiency wideband GaN-HEMT power amplifier are presented, where a method based on source-pull/load-pull simulation has been used to find optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks.
Journal ArticleDOI
New classes of miniaturized planar Marchand baluns
TL;DR: In this article, three new classes of miniaturized Marchand balun are defined based on the synthesis of filter prototypes, which are suitable for mixed lumped-distributed planar realizations with small size resulting from transmission-line resonators being a quarterwavelength long at frequencies higher than the passband center frequency.
Proceedings ArticleDOI
A 40W push-pull power amplifier for high efficiency, decade bandwidth applications at microwave frequencies
TL;DR: In this article, a push-pull power amplifier was designed and measured across a bandwidth of 250MHz to 3.1GHz, with output power was 46dBm with a drain efficiency of above 45% between 700MHz and 2GHz.
Proceedings ArticleDOI
Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications
Chenggang Xie,Anthony M. Pavio +1 more
TL;DR: The results of a 10 W distributed power amplifier with the maximum power output of more than 40 dBm and a power-added efficiency of 30-70% over the bandwidth of 20-2000 MHz are discussed.
Proceedings ArticleDOI
Analysis and design of wide-band power amplifier using GaN
TL;DR: In this article, two types of 20Watt broadband power amplifier-I and amplifier-II using GaN have been designed and compared with the conventional feedback matching networks (FFNs).