Journal ArticleDOI
Broadband single- and double-balanced resistive HEMT monolithic mixers
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TLDR
In this paper, a double-balanced (DB) 3-18 GHz and a single-balanced 2-16 GHz resistive HEMT monolithic mixer have been successfully developed, which achieves a third-order input intercept (IP/sub 3/) of +19.5 to +27.5 dBm for 2 to 16 GHz RF and 1 GHz IF.Abstract:
A double-balanced (DB) 3-18 GHz and a single-balanced (SB) 2-16 GHz resistive HEMT monolithic mixer have been successfully developed. The DB mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO balun, and two passive baluns for RF and IF. At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-13 GHz RF and 7.5-11 dB for 3-18 GHz RF. The SB mixer consists of a pair of AlGaAs/InGaAs HEMT's, an active LO balun, a passive IF balun and a passive RF power divider. At 16 dBm LO power, this mixer achieves the conversion losses of 8-10 dB for 4-15 GHz RF and 8-11 dB for 2-16 GHz RF. The simulated conversion losses of both mixers are very much in agreement with the measured results. Also, the DB mixer achieves a third-order input intercept (IP/sub 3/) of +19.5 to +27.5 dBm for a 7-18 GHz RF and 1 GHz IF at a LO drive of 16 dBm while the SB mixer achieves an input IP/sub 3/ of +20 to +28.5 dBm for 2 to 16 GHz RF and 1 GHz IF at a 16 dBm LO power. The bandwidth of the RF and LO frequencies are approximately 6:1 for the DB mixer and 8:1 for the SB mixer. The DB mixer of this work is believed to be the first reported DB resistive HEMT MMIC mixer covering such a broad bandwidth. >read more
Citations
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Journal ArticleDOI
Symmetric Offset Stack Balun in Standard 0.13- $\mu{\hbox {m}}$ CMOS Technology for Three Broadband and Low-Loss Balanced Passive Mixer Designs
Hwann-Kaeo Chiou,Jui-Yi Lin +1 more
TL;DR: In this article, symmetric offset stack Marchand single and dual baluns are designed, analyzed, and implemented in a 0.18-μm CMOS process to verify the feasibility.
Journal ArticleDOI
S-parameter measurement based quasistatic large-signal cold HEMT model for resistive mixer design
Dominique Schreurs,Yves Baeyens,Bart Nauwelaers,Walter De Raedt,Marleen Van Hove,Marc Van Rossum +5 more
TL;DR: In this article, a nonlinear cold HEMT model generation procedure is described, which starts with the determination of the corresponding small-signal model by adapting the cold FET extraction approach for HEMTs.
Journal ArticleDOI
An Active IF Balun for a Doubly Balanced Resistive Mixer
TL;DR: In this article, a wideband active intermediate frequency (IF) balun for a doubly balanced resistive mixer implemented using a 0.5 mum GaAs pHEMT process was realized through a DC-coupled differential amplifier in order to extend IF frequency of the mixer to DC.
Journal ArticleDOI
A Broadband Doubly Balanced Monolithic Ring Mixer with a Compact Intermediate Frequency (IF) Extraction
TL;DR: In this article, a doubly balanced monolithic microwave ring mixer with an advanced IF extraction fabricated using 0.15"m GaAs pHEMT process is presented to meet the requirements for broadband operation, high port-to-port isolation, and miniature chip area.
Proceedings ArticleDOI
Waveform Measurements on a HEMT Resistive Mixer
TL;DR: In this paper, the phase relationship between the two excitation signals on the characteristics of a HEMT resistive mixer is analyzed under two-tone stimuli, and the dependence of the intermodulation products on the phase relationships between the LO-signal and the RF signal becomes significant at high RF powers.
References
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A GaAs MESFET Mixer with Very Low Intermodulation
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Journal ArticleDOI
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Andrzej Materka,T. Kacprzak +1 more
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Proceedings ArticleDOI
2 to 8 GHz double balanced MESFET mixer with +30 dBm input 3rd order intercept
S. Weiner,D. Neuf,S. Spohrer +2 more
TL;DR: In this paper, the design and operation of a multioctave double-balanced MESFET mixer operating over a 2-8GHz range is described, and a quality factor is defined to show the efficiency of third-order intercept to available LO power.