Journal ArticleDOI
Characterization of localized atomic surface defects by tunneling microscopy and spectroscopy
TLDR
In this paper, tunneling microscopy and spectroscopy are used to characterize defects in Al overlayers on Si(111) at low coverages where Al and Si adatoms are both present.Abstract:
Tunneling microscopy and spectroscopy are used to characterize defects in Al overlayers on Si(111). At low coverages where Al and Si adatoms are both present, voltage‐dependent scanning tunneling microscopy imaging allows them to be selectively imaged due to their different electronic structures. In (3)1/2‐Al, Si adatoms substituting for Al give rise to a defect state at −0.4 eV which is strongly localized in space. Band‐bending measurements indicate that the Si substitutional defects are electrically neutral. The results are interpreted in terms of a Mott–Hubbard model for a strongly correlated system.read more
Citations
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Journal ArticleDOI
Band bending in semiconductors: chemical and physical consequences at surfaces and interfaces.
Zhen Zhang,John T. Yates +1 more
Journal ArticleDOI
Nanostructured oxides in chemistry: characterization and properties.
Marcos Fernández-García,Arturo Martínez-Arias,Jonathan C. Hanson,José Antonio Lozano Rodríguez +3 more
Journal ArticleDOI
Quantum engineering at the silicon surface using dangling bonds
Steven R. Schofield,Steven R. Schofield,Philipp Studer,Philipp Studer,Cyrus F. Hirjibehedin,Cyrus F. Hirjibehedin,Neil J. Curson,Neil J. Curson,Gabriel Aeppli,Gabriel Aeppli,David R. Bowler,David R. Bowler +11 more
TL;DR: This work uses a scanning tunnelling microscope to fabricate interacting chains of dangling bond defects on the hydrogen-passivated silicon (001) surface, demonstrating that atomically precise quantum states can be fabricated on silicon and suggesting a general model of quantum-state fabrication using other chemically passivated semiconductor surfaces.
Journal ArticleDOI
Nano-scale properties of defects in compound semiconductor surfaces
TL;DR: In this article, the atomic-scale properties of point defects and dopant atoms exposed on and in cleavage surfaces of III-V and II-VI semiconductors are reviewed.
Journal ArticleDOI
Scanned Probe Microscopies in Chemistry
TL;DR: The theory and applications of scanned probe microscopies in chemistry are reviewed in this paper, including scanning tunneling microscopy (STM), AFM, near-field scanning optical microscopy, and other related techniques.