Journal ArticleDOI
CMOS Hardness Prediction for Low-Dose-Rate Environments
G. F. Derbenwick,H. H. Sander +1 more
TLDR
In this article, it was shown that over a wide range of dose rates there is no true dose rate dependence and that the differences in radiation charging can be attributed to annealing effects.Abstract:
Exposure of MOS devices to different dose-rate ionizing radiation environments indicates an apparent dependence of radiation charging upon the dose rate. It is shown in this paper that over a wide range of dose rates there is no true dose rate dependence and that the differences in radiation charging can be attributed to annealing effects. It is shown that convolution integrals and linear system theory accurately predict charging behavior and that the impulse response of the system can accurately be predicted for very long times since the annealing phenomenon is temperature activated.read more
Citations
More filters
Journal ArticleDOI
Total ionizing dose effects in MOS oxides and devices
T.R. Oldham,F.B. McLean +1 more
TL;DR: In this article, the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation, are discussed.
Journal ArticleDOI
Radiation Effects in MOS Oxides
J.R. Schwank,M.R. Shaneyfelt,Daniel M. Fleetwood,J.A. Felix,Paul E. Dodd,P. Paillet,V. Ferlet-Cavrois +6 more
TL;DR: In this paper, two primary types of radiation-induced charge are oxide-trapped charge and interface-trap charge, which can cause large radiationinduced threshold voltage shifts and increases in leakage currents.
Journal ArticleDOI
Radiation effects and hardening of MOS technology: devices and circuits
H.L. Hughes,J.M. Benedetto +1 more
TL;DR: An overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation is presented in this paper, where the authors present an overview of the radiation effects on metal-oxide-semiconductor devices and integrated circuits.
Journal ArticleDOI
Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing
TL;DR: In this article, the authors present a tunneling model for MOS structures showing how the post-irradiation annealing deviates from a simple ln(t) dependence for a nonuniform spatial trap distribution.
Journal ArticleDOI
Radiation effects on microelectronics in space
J.R. Srour,J.M. McGarrity +1 more
TL;DR: The basic mechanisms of space radiation effects on microelectronics are reviewed in this article, including the effects of displacement damage and ionizing radiation on devices and circuits, single-event phenomena, dose enhancement, radiation effect on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment.
References
More filters
Journal ArticleDOI
Process Optimization of Radiation-Hardened CMOS Integrated Circuits
G. F. Derbenwick,B. L. Gregory +1 more
TL;DR: In this paper, the effects of processing steps on the radiation hardness of MOS devices have been systematically investigated, where quantitative relationships between the radiation-induced voltage shifts and processing parameters have been determined, where possible.
Journal ArticleDOI
Hole Transport and Recovery Characteristics of SiO2 Gate Insulators
TL;DR: In this paper, the transient response of a number of pedigreed SiO2 gate insulator MOS capacitors following exposure to a pulsed 13-MeV electron beam was studied as a function of time, temperature, and applied bias.
Journal ArticleDOI
Unified Model of Damage Annealing in CMOS, from Freeze-In to Transient Annealing
H. H. Sander,B. L. Gregory +1 more
TL;DR: In this paper, it was shown that holes in SiO2 are immobile at 76°K, and that if an electric field of either polarity is present in the siO2 during 76°k irradiation, to sweep out the mobile electrons, the holes will virtually all be trapped where created and produce a uniform positive charge density in the oxide.
Journal ArticleDOI
Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements
M. Simons,Harold L. Hughes +1 more
TL;DR: In this article, the activation energy distributions for the positive space charge induced in MOS structures by pulsed ionizing radiation have been calculated from short-term, isothermal annealing data.
Journal ArticleDOI
Process Controls for Radiation-Hardened Aluminum Gate Bulk Silicon CMOS
TL;DR: In this paper, four aspects of controlling a radiation hardened process are discussed and the process steps which are key to achieving hardness are identified and the required controls on these steps are determined.