Journal ArticleDOI
CMOS SPADs with up to 500 μm diameter and 55% detection efficiency at 420 nm
Federica Villa,Danilo Bronzi,Yu Zou,Carmelo Scarcella,Gianluca Boso,Simone Tisa,Alberto Tosi,Franco Zappa,Daniel Durini,Sascha Weyers,Uwe Paschen,Werner Brockherde +11 more
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TLDR
In this paper, the authors developed silicon SPADs with active area diameters as large as 500μm in a fully standard CMOS process, which can be used with on-chip integrated quenching circuitry to reduce the afterpulsing probability, or with external circuits to achieve even better photon-timing performances.Abstract:
Many demanding applications require single-photon detectors with very large active area, very low noise, high detection efficiency, and precise time response. Single-photon avalanche diodes (SPADs) provide all the advantages of solid-state devices, but in many applications other single-photon detectors, like photomultiplier tubes, have been preferred so far due to their larger active area. We developed silicon SPADs with active area diameters as large as 500 μm in a fully standard CMOS process. The 500 μm SPAD exhibits 55% peak photon detection efficiency at 420 nm, 8 kcps of dark counting rate at 0°C, and high uniformity of the sensitivity in the active area. These devices can be used with on-chip integrated quenching circuitry, which reduces the afterpulsing probability, or with external circuits to achieve even better photon-timing performances, as good as 92 ps FWHM for a 100 μm diameter SPAD. Owing to the state-of-the-art performance, not only compared to CMOS SPADs but also SPADs developed in custom...read more
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Journal ArticleDOI
Non-line-of-sight imaging using a time-gated single photon avalanche diode.
TL;DR: A non-line-of-sight imaging system that uses a single-pixel, single-photon avalanche diode (SPAD) to collect time- of-flight information that provides significant improvements in terms of power requirements, form factor, cost, and reconstruction time, while maintaining a comparable time resolution.
Journal ArticleDOI
CMOS Imager With 1024 SPADs and TDCs for Single-Photon Timing and 3-D Time-of-Flight
Federica Villa,Rudi Lussana,Danilo Bronzi,Simone Tisa,Alberto Tosi,Franco Zappa,Alberto Dalla Mora,Davide Contini,Daniel Durini,Sascha Weyers,Werner Brockherde +10 more
TL;DR: In this article, the authors present a CMOS imager consisting of 32×32 smart pixels, each one able to detect single photons in the 300-900 nm wavelength range and to perform both photon-counting and photon-timing operations on very fast optical events with faint intensities.
Journal ArticleDOI
New frontiers in time-domain diffuse optics, a review
Antonio Pifferi,Antonio Pifferi,Davide Contini,Alberto Dalla Mora,Andrea Farina,Lorenzo Spinelli,Alessandro Torricelli,Alessandro Torricelli +7 more
TL;DR: This study shows how these tools could lead on one hand to compact and wearable time-domain devices for point-of-care diagnostics down to the consumer level and on the other hand to powerful systems with exceptional depth penetration and sensitivity.
Journal ArticleDOI
SPAD Figures of Merit for Photon-Counting, Photon-Timing, and Imaging Applications: A Review
TL;DR: In this paper, the authors present some figures of merit (FoMs) able to summarize the typical SPAD performance (i.e., photon detection efficiency, dark counting rate, afterpulsing probability, hold-off time, and timing jitter) and identify a proper metric for SPAD comparisons, when used either as single-pixel detectors or in imaging arrays.
Journal ArticleDOI
100 000 Frames/s 64 × 32 Single-Photon Detector Array for 2-D Imaging and 3-D Ranging
Danilo Bronzi,Federica Villa,Simone Tisa,Alberto Tosi,Franco Zappa,Daniel Durini,Sascha Weyers,Werner Brockherde +7 more
TL;DR: In this article, the design and characterization of a multipurpose 64 × 32 CMOS single-photon avalanche diode (SPAD) array is presented, which is fabricated in a high-voltage 0.35-μm CMOS technology and consists of 2048 pixels, each combining a very low noise (100 cps at 5-V excess bias) 30μm SPAD, a prompt avalanche sensing circuit, and digital processing electronics.
References
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Advanced Time-Correlated Single Photon Counting Techniques
TL;DR: In this article, the authors discuss the application of modern TCSPC techniques in optical signal recording and their application in the field of photon count counting, including the use of detectors for photon counting.
Journal ArticleDOI
Experimental violation of Bell's inequality based on phase and momentum.
John Rarity,P. R. Tapster +1 more
TL;DR: Two-color photon pairs are selected by two double apertures placed to satisfy the phase-matching conditions at a down-conversion crystal and coincident two-photon detections are measured.
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On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices
TL;DR: In this article, a photon emission efficiency of 2.9*10/sup 5/ photons with energy higher than 1.14 eV per carrier crossing the junction, independent of the lattice temperature down to 20 K, was measured.
Journal ArticleDOI
Principles and features of Single Photon Avalanche Diode Arrays
TL;DR: In this paper, the design and fabrication of a single-photon avalanche diode (SPAD) array system for counting and time-tagging single photons by means of a monolithic array sensor is discussed.
Journal ArticleDOI
Trapping phenomena in avalanche photodiodes on nanosecond scale
TL;DR: In this article, a technique for measuring the release of minority carriers emitted from deep levels in avalanche photodiodes (APDs) at operating conditions is discussed, which can be useful in tailoring gettering processes for APDs and in studies of traps at high electric fields.