Proceedings ArticleDOI
Comparison of high voltage rectifier structures
M. Mehrotra,Bantval Jayant Baliga +1 more
- pp 199-204
TLDR
A comparative analysis of the p-i-n, SSD (static shielding diode), soft and fast recovery diode, SPEED (self-adapting P-emitter efficiency diode) and MPS (merged P-N Schottky) rectifiers is performed using the two-dimensional numerical simulator MEDICI.Abstract:
A comparative analysis of the p-i-n, SSD (static shielding diode), SFD (soft and fast recovery diode), SPEED (self-adapting P-emitter efficiency diode), and MPS (merged P-N Schottky) rectifiers is performed using the two-dimensional numerical simulator MEDICI. Identical drift region properties are used to obtain the forward I-V, reverse I-V, and reverse recovery characteristics. The MPS, SSD, and SFD rectifiers are found to exhibit a much smaller stored charge and a shorter reverse recovery time than the other rectifiers. As the dose and depth of the shallow P-region implant is increased, the SSD rectifier characteristics are found to shift from those of the MOS rectifier to those of the p-i-n rectifier. It is concluded that the tradeoff between stored charge, leakage current, reverse recovery time, and forward voltage drop is best for the MPS and SSD rectifiers. These rectifiers also exhibit improved soft recovery during switching. >read more
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References
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Improved recovery of fast power diodes with self-adjusting p emitter efficiency
TL;DR: In this article, a fast p-n-n/sup +/ power rectifier is proposed, which shows a significantly improved recovery behavior compared to standard diodes designed for the same blocking and forward voltages.
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High-speed low-loss p-n diode having a channel structure
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Proceedings ArticleDOI
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M. Naito,H. Matsuzaki,T. Ogawa +2 more
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Journal ArticleDOI
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