Journal ArticleDOI
Compositional optimization of binary Selenium-Antimony films for low-power electrical and optical storage
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TLDR
In this article, structural, electrical and optical properties of binary Selenium-Antimony (Sb-Se) films were investigated for low power and high speed NVRAM memories with low power.About:
This article is published in Journal of Alloys and Compounds.The article was published on 2018-04-05. It has received 11 citations till now. The article focuses on the topics: Amorphous solid & Optical storage.read more
Citations
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Journal ArticleDOI
Growth and optical properties of nanocrystalline Sb2Se3 thin-films for the application in solar-cells
TL;DR: In this article, four different Sb2Se3 films were grown on Si/SiO2 (1.0, 0, 0) substrates at ambient temperature using ultra-high vacuum molecular beam evaporation technique.
Journal ArticleDOI
Change in Crystallization Mechanism of Sb Film by Doping VO2 for Ultraretention and High-Speed Phase-Change Memory
Qian Zhang,Yegang Lu +1 more
TL;DR: In this article, the authors proposed a phase-change memory based on pure Sb thin film, which has attracted great interest for phase change memory owing to its appealing properties such as simple composition, fast crystallization, and sufficient electrical contrast between the two phases.
Journal ArticleDOI
Influence of gamma-irradiation on the optical and structural properties of Se85Te15-xBix nano-thin chalcogenide films
TL;DR: In this paper, bulk Se85Te15-xBix chalcogenide glasses were synthesized by melt quenching technique and their optical and structural properties were analyzed by the exposure of different gamma irradiation doses.
Journal ArticleDOI
Physical properties and structure characteristics of titanium-modified antimony-selenium phase change thin film
TL;DR: In this article, the effects of the titanium dopant on the physical properties and structure of SbSe thin films were systematically investigated by experiments and first-principles calculations.
Journal ArticleDOI
In situ monitoring of the permanent crystallization, phase transformations and the associated optical and electrical enhancements upon heating of Se thin films
TL;DR: In this paper, the in situ structural transformations from amorphous to polycrystalline upon heating and the associated enhancements in the structural parameters of selenium thin films are studied by means of X-ray diffraction technique.
References
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Journal ArticleDOI
Optical Properties and Electronic Structure of Amorphous Germanium
Jan Tauc,R. Grigorovici,A. Vancu +2 more
TL;DR: In this article, the optical constants of amorphous Ge were determined for the photon energies from 0.08 to 1.6 eV, and the absorption is due to k-conserving transitions of holes between the valence bands as in p-type crystals.
Journal ArticleDOI
Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
E. A. Davis,Nevill Mott +1 more
TL;DR: In this article, the experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c and a.c. conductivity, drift mobility and optical absorption.
Book
Spectroscopic Ellipsometry: Principles and Applications
TL;DR: In this paper, the authors present an overview of the application of Spectroscopic Ellipsometry in real-time monitoring of thin-film growth and its application in real time monitoring of anisotropic materials.
Journal ArticleDOI
Disorder-induced localization in crystalline phase-change materials
Theo Siegrist,Peter Jost,Hanno Volker,Michael Woda,P. Merkelbach,C. Schlockermann,Matthias Wuttig +6 more
TL;DR: A metal-insulator transition on increasing annealing temperature for a group of crystalline phase-change materials, where the metal- insulator transition is due to strong disorder usually associated only with amorphous solids, might enable multilevel resistance states in upcoming storage devices.
Journal ArticleDOI
Design Rules for Phase‐Change Materials in Data Storage Applications
TL;DR: It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates, providing a design rule for phase-change materials.
Related Papers (5)
Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications
Jung-Sung Kim,J.H. Park,D.-H. Ko +2 more