Journal ArticleDOI
Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure
TLDR
In this paper, a new In0.49Ga0.51P/AlxGa1−xAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure is theoretically analyzed and investigated.Abstract:
A newly designed In0.49Ga0.51P/AlxGa1−xAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure is theoretically analysed and investigated. By introducing a compositionally linear-graded AlGaAs layer into conventional InGaP/GaAs heterojunctions, a zero conduction-band discontinuity and a completely deleted potential spike can be obtained. Due to the suppression of potential spikes at the emitter/base junction, the studied device shows better dc performances such as a lower offset voltage (≤25 mV), lower saturation voltage (≤0.3 V), uniform current gain (~40) and lower turn-on voltage (~1.15 V). In addition, better ac performances are achieved. Consequently, the designed structure provides promise for high-performance analogue, digital and microwave device applications.read more
Citations
More filters
GaAlAs/GaAs heterojunction bipolar transistors. Issues and prospects for application
TL;DR: The microwave and digital performance status of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) is reviewed in this article, where the maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported.
Patent
AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor
Noren Pan,Byung-Kwon Han +1 more
TL;DR: In this article, a base spacer layer and an emitter layer are provided to realize a lower turn-on voltage threshold in a heterojunction bipolar transistor, where the thickness of the emitter is kept to a minimum to reduce the associated space charge recombination current.
Journal ArticleDOI
Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process
TL;DR: In this article, a simple approach for highly stable solution-based zinc oxide (ZnO) TFTs by simply evaporating Al on the back channel layer without any additional chemical or plasma process for passivation is reported.
Journal ArticleDOI
Further Suppression of Surface-Recombination of an InGaP/GaAs HBT by Conformal Passivation
Ssu-I Fu,Shiou-Ying Cheng,Tzu-Pin Chen,Po-Hsien Lai,Ching-Wen Hung,Kuei-Yi Chu,Li-Yang Chen,Wen-Chau Liu +7 more
TL;DR: In this article, conformal passivation on an InGaP/GaAs HBT with significant reduction in the base surface-recombination effect is demonstrated, and not only dc behaviors but also RF performances are remarkably improved compared with the conventional emitter-ledge structure.
Journal ArticleDOI
Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors
Ssu I. Fu,Rong Chau Liu,Shiou Ying Cheng,Po Hsien Lai,Yan Ying Tsai,Ching Wen Hung,Tzu Pin Chen,Wen-Chau Liu +7 more
TL;DR: In this paper, the influence of emitter ledge length on the performance of InGaP∕GaAs heterojunction bipolar transistors is comprehensively investigated due to the band-bending effect at the intersection of the emitter edge with the exposed base surface, an undesired potential saddle point is formed.
References
More filters
Book
Handbook of III-V Heterojunction Bipolar Transistors
TL;DR: In this paper, basic properties and device physics of III-V materials are discussed. But the authors focus on the performance of transistors and do not discuss the properties of the transistors themselves.
Journal ArticleDOI
GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
TL;DR: The microwave and digital performance status of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) is reviewed in this paper, where the maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported.
Journal ArticleDOI
Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction by C‐V profiling
TL;DR: In this paper, the valence and conduction band discontinuities for the lattice matched (Ga,In)P/GaAs heterojunction have been determined by capacitance-voltage (C‐V) profiling.
GaAlAs/GaAs heterojunction bipolar transistors. Issues and prospects for application
TL;DR: The microwave and digital performance status of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) is reviewed in this article, where the maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported.
Journal ArticleDOI
Band lineup for a GaInP/GaAs heterojunction measured by a high‐gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition
TL;DR: In this paper, a GaInP(N)/GaAs(p) heterojunction bipolar transistor was fabricated by metalorganic chemical vapor deposition (MOCVD) for the first time and the common emitter current gain exceeded 200 at a current density around 10 A/cm2 and the offset voltage was as small as 50 mV.