Journal ArticleDOI
Condensation of non‐equilibrium charge carriers in semiconductors
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This article is published in Physica Status Solidi (a).The article was published on 1972-06-16. It has received 224 citations till now. The article focuses on the topics: Non-radiative recombination & Charge carrier.read more
Citations
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Journal ArticleDOI
Optical properties of highly excited direct gap semiconductors
Claus F. Klingshirn,Hartmut Haug +1 more
TL;DR: In this paper, the experimental and theoretical aspects of the optical properties of direct-gap semiconductors under strong optical excitation are discussed, and the optical spectra of dense excitonic systems, which are mainly observed in copper halides and II-VI compounds, are shown to be determined mainly by the interaction processes between excitionic molecules, polaritons and free carriers.
Journal ArticleDOI
Optical gain and stimulated emission in periodic nanopatterned crystalline silicon.
TL;DR: The controlled nanoscale silicon engineering, combined with the low material loss in this sub-bandgap spectral range and the long electron lifetime in such A-type trapping centres, gives rise to the measured optical gain and stimulated emission and provides a new pathway to enhance light emission from silicon.
Journal ArticleDOI
Electroluminescence in organics
TL;DR: There is a growing interest in organic electroluminescence (EL) and a great deal of progress has been made recently in improving the performance of various classes of organic EL devices as discussed by the authors.
Book ChapterDOI
Correlations in Electron Liquids
K.S. Singwi,M.P. Tosi +1 more
TL;DR: In this paper, an equation-of-motion approach is adopted for the density fluctuation n(r, t) in the presence of a weak external perturbation, which has the advantage of familiarity and appeals very easily to one's intuition.
Book ChapterDOI
General Density Functional Theory
Walter Kohn,P. Vashishta +1 more
TL;DR: This chapter presents a critical review of the general theory of density functional theory together with some illustrative examples and discusses several important areas of application.
References
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Journal ArticleDOI
Mobile and Immobile Effective-Mass-Particle Complexes in Nonmetallic Solids
Journal ArticleDOI
Electrical Properties of N -Type Germanium
P. P. Debye,Esther M. Conwell +1 more
TL;DR: In this paper, an analytical formula for obtaining the mobility from lattice and impurity mobilities is included, and the effect of electron-electron collisions on the mobility is considered in a qualitative manner.
Journal ArticleDOI
New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
TL;DR: In this article, it was shown that the impurity center remains in its ground electronic state during these transitions, and the identified phonons are those which conserve momentum (M. C. phonons) in the indirect inter-band transitions, as is shown from a comparison between the intrinsic absorption and luminescence spectra.
Journal ArticleDOI
Spontaneous Radiative Recombination in Semiconductors
TL;DR: In this article, the authors derived the radiative recombination lifetimes due to direct and indirect transitions and applied them to Ge and Si, respectively, and showed that in Ge at room temperature, while the density of filled states in the conduction band at k=0 is very low, the rate of recombination by direct transitions is nevertheless somewhat greater than that by indirect transitions.