Journal ArticleDOI
Crystalline to amorphous transformation in ion-implanted silicon: a composite model
John R. Dennis,Edward B. Hale +1 more
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In this paper, the authors used the overlap damage model to determine the critical dose from the data, the size of the amorphous region around the ion track, and the degree of overlap damage required for amorphization.Abstract:
The transformation of silicon to the amorphous state by implanted ions was studied both experimentally and theoretically. Experimentally, the amount of transformed silicon and the critical ion dose necessary to amorphize the entire implanted layer were determined by ESR. How the critical dose varies with ion mass (Li, N, Ne, Ar, and Kr), ion energy (20–180 keV), and implant temperature (77–475 K) was determined. Theoretically, several phenomenological models were used to analyze these data. The overlap‐damage model was used to determine the critical dose from the data, the size of the amorphous region around the ion track, and the degree of overlap damage required for amorphization. For all implants, the first ion created only predamage, while the second or third ion into the same region caused the amorphous transformation. The critical‐energy‐density model was in good agreement with the measured critical doses. This model assumed that a region would become amorphous if the energy density deposited into atomic processes by the ions exceeded the critical energy density of 6×1023 eV/cm3. For high‐temperature implantations, out‐diffusion models can explain the temperature dependence of the critical dose. Although the analysis is not completely definitive, the critical‐energy‐density model may also be valid at high temperature if diffusion of the damage energy is taken into account. This out‐diffusion of energy from around the ion track occurs via a thermally activated process. Probably, the energy moves with the out‐diffusion of the vacancies from the ion track.read more
Citations
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Journal ArticleDOI
Radiation effects in crystalline ceramics for the immobilization of high-level nuclear waste and plutonium
William J. Weber,Rodney C. Ewing,C. R. A. Catlow,T. Diaz de la Rubia,Linn W. Hobbs,C. Kinoshita,Hj. Matzke,Arthur T. Motta,Michael Nastasi,Ekhard K. H. Salje,Eric R. Vance,Steven J. Zinkle +11 more
TL;DR: A comprehensive review of the state-of-the-art of radiation effects in crystalline ceramics that may be used for the immobilization of high-level nuclear waste and plutonium is provided in this article.
Journal ArticleDOI
Models and mechanisms of irradiation-induced amorphization in ceramics
TL;DR: A number of models have been developed to describe the various amorphization processes and the effects of temperature on the kinetics of amorphisation as mentioned in this paper, and these models contain a number of parameters relating to irradiation-assisted and thermal recovery processes.
Journal ArticleDOI
Primary radiation damage: A review of current understanding and models
Kai Nordlund,Steven J. Zinkle,Steven J. Zinkle,A. E. Sand,F. Granberg,Robert S Averback,R. E. Stoller,Tomoaki Suzudo,Lorenzo Malerba,Florian Banhart,William J. Weber,William J. Weber,Francois Willaime,Sergei L. Dudarev,David Simeone +14 more
TL;DR: In this article, the authors consider the extensive experimental and computer simulation studies that have been performed over the past several decades on what the nature of the primary damage is, and provide alternatives to the current international standard for quantifying this energetic particle damage, the Norgett-Robinson-Torrens displacements per atom (NRT-dpa) model for metals.
Journal ArticleDOI
Ion-beam-induced amorphization and recrystallization in silicon
TL;DR: In this paper, the most significant experimental observations related to ion-beam-induced amorphization in Si and the models that have been developed to describe the process are described and analyzed.
Journal ArticleDOI
High density cascade effects
TL;DR: In this article, the effects of high density cascades in solids are discussed with reference to their effects in the bulk (i.e. damage production and inert gas detrapping) and on the surface properties (e.g. sputtering, secondary ion and electron emission).
References
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Journal ArticleDOI
Ion implantation in semiconductors—Part II: Damage production and annealing
TL;DR: In this article, a qualitative description of the damage produced by an implanted ion is presented, followed by a partial inventory of the basic defects that are found in ion-implanted silicon, where theoretical predictions are compared to a variety of experimental data.
Journal ArticleDOI
Structural, Optical, and Electrical Properties of Amorphous Silicon Films
Journal ArticleDOI
A model for the formation of amorphous Si by ion bombardment
F. F. Morehead,B. L. Crowder +1 more
TL;DR: In this paper, a phenomenological model was proposed to account for the variation of the critical dose required to produce a continuous amorphous layer by ion bombardment with ion, target, temperature, and, with minor additional assumptions, dose rate.