Journal ArticleDOI
High density cascade effects
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In this article, the effects of high density cascades in solids are discussed with reference to their effects in the bulk (i.e. damage production and inert gas detrapping) and on the surface properties (e.g. sputtering, secondary ion and electron emission).Abstract:
The objective of this article is to review the effects of high density cascades in solids. Such cascades can be separated into those occurring in which “high density” refers to either the density of atomic collision events or to the density of ionization. Both types of cascade are discussed with reference to their effects in the bulk (i.e. damage production and inert gas detrapping) and on the surface properties (i.e. sputtering, secondary ion and electron emission). The appropriate experimental data are reviewed and discussed in relation to the various proposed spike models; i.e. displacement, thermal, plasticity and ionization spikes.read more
Citations
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Journal ArticleDOI
Materials Processing by Gas Cluster Ion Beams
TL;DR: In this paper, the principles and experimental status of gas cluster ion beam (GCIB) processing as a promising surface modification technique for practical industrial applications are discussed from the moment of neutral cluster formation, through ionization, acceleration and impact upon a surface.
Journal ArticleDOI
Use of ion beam assisted deposition to modify the microstructure and properties of thin films
TL;DR: Ion beam assisted deposition, the bombardment of a thin film with a beam of energetic particles during deposition, provides a powerful technique for modifying the microstructure and properties of thin films and coatings as discussed by the authors.
Book ChapterDOI
Displacement damage in irradiated metals and semiconductors
TL;DR: In this article, the authors describe the fundamental mechanisms of producing atomic rearrangements and point defects in cascades, the configurations of defects in their primary state of damage, and the fates of these defects as they migrate away from their nascent locations.
Journal ArticleDOI
Ion-beam-induced amorphization and recrystallization in silicon
TL;DR: In this paper, the most significant experimental observations related to ion-beam-induced amorphization in Si and the models that have been developed to describe the process are described and analyzed.
Journal ArticleDOI
Ion beam mixing: Basic experiments
B. M. Paine,Robert S Averback +1 more
TL;DR: In this article, basic quantitative experiments in ion beam mixing of simple layered solid systems are reviewed, where sample configurations fall into two categories: ∼ 10 A "marker" layers of impurity atoms buried in otherwise homogeneous media, and "bilayers" of two materials of several hundred A each.
References
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Journal ArticleDOI
Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Book ChapterDOI
Ion implantation in semiconductors
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Ion Implantation in Semiconductors
James W. Mayer,József Gyulai +1 more
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Journal ArticleDOI
II. The energy spectrum of ejected atoms during the high energy sputtering of gold
TL;DR: In this paper, the energy spectrum of sputtered atoms has been determined for several gold specimens, both single crystals and polycrystalline aggregates, using the technique described in part I. The energies of the ejected atoms ranged from some 10−2 ev up to about 104 ev.