Journal ArticleDOI
Deep-level transient spectroscopy (DLTS) analysis of defect levels in semiconductor alloys
TLDR
In this paper, the effect of broadening on the capacitance transient and on deep-level transient spectroscopy (DLTS) analysis of traps is examined and the authors illustrate their analysis by considering both simulated and actual experimental situations.Abstract:
A deep trap in the fundamental gap of a semiconductor has a sharp (delta function) character. In a semiconductor alloy the presence of disorder introduces a distribution of trap activation energies. The authors have undertaken a detailed analytical and numerical exercise to examine the effect of such broadening on the capacitance transient and on deep-level transient spectroscopy (DLTS) analysis of traps. In general the standard DLTS analysis introduces negligible error except in cases of severe broadening where it overestimates the activation energy. They illustrate their analysis by considering both simulated and actual experimental situations.read more
Citations
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Journal ArticleDOI
Structure and properties of vacancy-oxygen complexes in Si 1 − x Ge x alloys
Vladimir P. Markevich,Anthony R. Peaker,João A. P. Coutinho,R. Jones,Vitor J.B. Torres,Sven Öberg,Patrick R. Briddon,L.I. Murin,L. Dobaczewski,Nickolay Abrosimov +9 more
TL;DR: The electronic properties and structure of vacancy-oxygen (VO) complexes in Czochralski-grown Si1-xGex crystals (0, 1) were studied in this paper.
Journal ArticleDOI
Observation of surface defects in 6H-SiC wafers
TL;DR: In this paper, a broad peak was observed in commercially available single-crystal 6H-SiC material with nitrogen doped, n type with free carrier concentration (ND−NA) of 1.3×1018 cm−3 that was determined from capacitance-voltage measurements.
Journal ArticleDOI
DLTS evaluation of nonexponential transients of defect levels in cuprous oxide (Cu2O)
TL;DR: In this paper, a weak disordered Gaussian distribution of acceptor states of the Schottky barrier with respect to the trap-band activation energy and capture cross-section was investigated.
Journal ArticleDOI
Broadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics
Jun Xia,Andreas Mandelis +1 more
TL;DR: In this paper, the authors extended deep level photothermal spectroscopy (DLPTS) to the low temperature region in order to cover several defect states in semi-insulating GaAs.
Journal ArticleDOI
Alloy broadening of the near-gap luminescence and the natural band offset in semiconductor alloys
TL;DR: In this paper, the broadening of the near-gap emission (BE) and conduction-band to acceptor (CA) in semiconductor alloys is reanalysed using the Markoff statistical theory for fluctuations of alloy composition.
References
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Journal ArticleDOI
Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys
TL;DR: In this paper, the authors presented calculated DLTS spectra in a simple model for broadened defect levels and compared the calculated spectra with experimental data for a deep electron trap in GaAs1−xPx.
Journal ArticleDOI
Schottky-barrier capacitance measurements for deep level impurity determination
M. Bleicher,E. Lange +1 more
TL;DR: In this paper, the time dependence of a Schottky-barrier capacitance due to thermal excitation of trapping centres has been studied and an expression for the junction capacitance is derived which is not restricted to any special range of reverse bias nor to a special relation between shallow and deep impurity concentration.