Proceedings ArticleDOI
Design and evaluation of GaN-based dual-phase interleaved MHz critical mode PFC converter
Zhengyang Liu,Xiucheng Huang,Mingkai Mu,Yuchen Yang,Fred C. Lee,Qiang Li +5 more
- pp 611-616
TLDR
In this paper, a gallium nitride (GaN) high electron mobility transistor (HEMT) based dual-phase interleaved MHz critical conduction mode (CRM) power factor correction (PFC) converter is presented.Abstract:
This paper presents the design consideration and performance evaluation of gallium nitride (GaN) high electron mobility transistor (HEMT) based dual-phase interleaved MHz critical conduction mode (CRM) power factor correction (PFC) converter. A 1.2kW 1-3MHz interleaved boost PFC converter prototype is built with 97.9% peak efficiency and 120W/in3 power density. The significant impact of MHz frequency is demonstrated as dramatically size reduction of boost inductor and electro-magnetic interference (EMI) filter. Several inductor designs are discussed. The corner frequency of EMI filter is pushed to several hundreds of kHz. Finally, the limitation of conventional boost PFC converter is discussed as high conduction loss on diode rectifier bridge and high switching loss caused by valley switching, which is negligible in other low frequency PFC converter but significant in MHz PFC converter. The totem-pole bridgeless PFC converter is introduced to further improve the efficiency with no rectifier bridge and zero-voltage switching (ZVS) extension strategy.read more
Citations
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Journal ArticleDOI
Design of GaN-Based MHz Totem-Pole PFC Rectifier
TL;DR: In this paper, a dual-phase interleaved GaN-based MHz totem-pole PFC rectifier is demonstrated with 99% peak efficiency and 220 W/in $^{\mathrm {{3}}}$ power density.
Journal ArticleDOI
High-Efficiency High-Density Critical Mode Rectifier/Inverter for WBG-Device-Based On-Board Charger
TL;DR: Design considerations of the ac/dc stage are presented, including: the evaluation of 1.2-kV SiC MOSFETs; the ZVS extension techniques to realize ZVS under all input/output variations; and a novel universal control strategy for both the rectifier mode and the inverter mode.
Journal ArticleDOI
Design and Optimization of a 380–12 V High-Frequency, High-Current LLC Converter With GaN Devices and Planar Matrix Transformers
Mingkai Mu,Fred C. Lee +1 more
TL;DR: In this paper, a 1-MHz 1-kW LLC resonant converter using GaN devices and planar matrix transformers is proposed for data center data center applications, which achieves high-current, high-efficiency, and low-cost power solutions.
Journal ArticleDOI
A High-Efficiency High-Density Wide-Bandgap Device-Based Bidirectional On-Board Charger
TL;DR: In this article, a two-stage topology for a 6.6-kW on-board charger is proposed, which employs an interleaved bridgeless totem-pole ac/dc in critical conduction mode to realize zero-voltage switching, and a bidirectional CLLC resonant converter operating at 500 kHz is chosen for the second stage.
Journal ArticleDOI
High-Frequency High-Efficiency GaN-Based Interleaved CRM Bidirectional Buck/Boost Converter with Inverse Coupled Inductor
TL;DR: In this paper, the authors presented a high-frequency high-efficiency GaN device-based interleaved critical current mode (CRM) bidirectional buck/boost converter with an inverse coupled inductor.
References
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Proceedings ArticleDOI
High efficiency power factor correction using interleaving techniques
TL;DR: In this article, an efficient 1.5 kW power factor correction converter for computer applications is presented, where eight boost-topology switching cells are interleaved to meet stringent EMI input ripple specifications while operating at a very low switching frequency to minimize switching losses.
Journal ArticleDOI
Evaluation and Application of 600 V GaN HEMT in Cascode Structure
TL;DR: In this article, the characteristics and operation principles of a 600 V cascode GaN HEMT were studied and compared with a state-of-the-art silicon MOSFET.
Journal ArticleDOI
State-of-the-art, single-phase, active power-factor-correction techniques for high-power applications - an overview
Milan M. Jovanovic,Yungtaek Jang +1 more
TL;DR: The merits and limitations of several PFC techniques used in today's network-server and telecom power supplies to maximize their conversion efficiencies are discussed, and the effect of recent advancements in semiconductor technology on the performance and design considerations of PFC converters is discussed.
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Computationally efficient winding loss calculation with multiple windings, arbitrary waveforms, and two-dimensional or three-dimensional field geometry
TL;DR: The squared-field-derivative method for calculating eddy-current (proximity effect) losses in round-wire or litz-wire transformer and inductor windings is derived in this paper.
Journal ArticleDOI
Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT
TL;DR: In this paper, the authors presented a simulation model for high-voltage gallium nitride (GaN) high-electron-mobility transistors (HEMT) in a cascode structure.
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