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Journal ArticleDOI

Design of compact and wide bandwidth SPDT with anti-stiction torsional RF MEMS series capacitive switch

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TLDR
In this article, a single pole double throw (SPDT) RF MEMS switch design based on a torsional series capacitive switch is presented. But the design of the SPDT topology is not discussed.
Abstract
This paper presents a new single pole double throw (SPDT) RF MEMS switch design based on a torsional series capacitive switch. The torsional configuration and use of floating metal reduce the stiction probabilities. Use of a single series capacitive switch compared to the conventional approach of a capacitive and series combination, offers compact size, higher bandwidth and superior reliability. The optimized SPDT topology offers a wider bandwidth of 17 GHz (3---20 GHz) with insertion loss of ?0.3 to ?0.4 dB and isolation ?20 to ?44 dB. The proposed structure actuates at 9 V and the contact force varies in the elastic contact regime from 20 to 68 µN for the bias voltage of 10---15 V.

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Citations
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Journal ArticleDOI

A novel design for low insertion loss, multi-band RF-MEMS switch with low pull-in voltage

TL;DR: In this paper, float metal concept is utilized to reduce the RF overlap area between the movable structure and central conductor of CPW for improving the insertion loss of the device, which has been achieved without affecting the downstate response.
Journal ArticleDOI

A Novel SPDT Rotary RF MEMS Switch for Low Loss and Power Efficient Signal Routing

TL;DR: In this paper, a low loss with port-to-port high isolation electro-thermally actuated single-pole double-throw (SPDT) radio frequency microelectromechanical systems switch with a novel latching mechanism is investigated.
Journal ArticleDOI

Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch

TL;DR: In this paper, a single-pole double-throw (SPDT) switch based on series capacitive configuration is proposed, and the critical process parameters are analyzed to improve the fabrication process.
Proceedings ArticleDOI

A novel electrostatically actuated spdt rotary RF MEMS switch for ultra-broadband applications

TL;DR: In this paper, a single-pole double-throw (SPDT) radio frequency microelectromechanical system (RF MEMS) switch was designed for ultra-broadband applications.
Journal ArticleDOI

A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch

TL;DR: In this paper, the authors proposed a new type of capacitive shunt RF-MEMS switch, which consists of a beam in the form of two symmetric cantilevers anchored at the central conductor of CPW, where they generate a fixed capacitance.
References
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Book

RF MEMS: Theory, Design, and Technology

TL;DR: In this paper, the basics of RF MEMS and how to design practical devices and circuits are discussed, as well as expert tips for designers and a range of real-world applications.
Journal ArticleDOI

RF MEMS switches and switch circuits

TL;DR: In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Journal ArticleDOI

Low-loss 2- and 4-bit TTD MEMS phase shifters based on SP4T switches

TL;DR: In this paper, 2-and 4-bit X-to-K/sub u/-band phase shifters with a very low insertion loss are described, which is achieved using MEMS SP4T switches, which reduce the number of switches in the signal path by half compared to conventional designs with SP2T switches.
Proceedings ArticleDOI

A packaged, high-lifetime ohmic MEMS RF switch

TL;DR: An electrostatically actuated broadband ohmic microswitch has been developed that has applications from DC through the microwave region as discussed by the authors, which is a 3-terminal device based on a cantilever beam and is fabricated using an all-metal, surface micromachining process.
Journal ArticleDOI

Compact Low-Loss Tunable $X$ -Band Bandstop Filter With Miniature RF-MEMS Switches

TL;DR: In this paper, a two-pole filter is proposed based on capacitively loaded folded-λ/2 resonators coupled to a microstrip line, and the filter analysis includes the effects of nonadjacent inter-resonator coupling.
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