Journal ArticleDOI
Device physics of TRAPATT oscillators
B.C. DeLoach,D.L. Scharfetter +1 more
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In this paper, a simplified physical model was used to describe TRAPATT (TRApped Plasma Avalanche Triggered Transit) operation, and a complete high-efficiency device design was generated and the dependence of operation on physical parameters was elucidated.Abstract:
This paper utilizes a simplified physical model to describe TRAPATT (TRApped Plasma Avalanche Triggered Transit) operation. By yielding on computational accuracy, a complete high-efficiency device design is generated and the dependence of operation on physical parameters is elucidated. The extreme complexity of the precise differential equations describing TRAPATT operation has made the calculation of a single diode-circuit configuration a tour de force. However, by observing the important features of such a solution, a simplified approach giving realistic answers has been evolved. A theoretical device design has been evolved. This design provides device width and impurity density as a function of TRAPATT frequency, and indicates a decreasing degree of "reach through" with increasing frequency. In addition, the explicit dependence of width and impurity density on the diode's reverse saturation current has been obtained. The launching of the avalanche zone through the diode, and, in particular, the limitations implicit in the recovery to a swept-out state, are of broad significance in other types of diodes, particularly p-i-n switches and "snap" diodes.read more
Citations
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Journal ArticleDOI
Basic Principles and Properties of Avalanche Transit-Time Devices
TL;DR: In this article, the basic principles and characteristics of the various modes of operation of avalanche transit-time devices are presented and experimental results are also presented in order to indicate the present state of development and the kind of performance which has been achieved in these devices.
Journal ArticleDOI
Tunneling-assisted impact ionization fronts in semiconductors
TL;DR: In this article, a type of ionization front in layered semiconductor structures is discussed, where an extremely sharp voltage ramp (∼10kV/ns) is applied in reverse direction to a Si p+n-n−n+ structure that is connected in series with an external load.
Journal ArticleDOI
Double-drift-region (p + pnn + ) avalanche diode oscillators
TL;DR: The double-drift region avalanche diode oscillator (p+pnn+) was proposed in this article, which has two drift regions and is essentially two complementary DA oscillators in series.
Journal ArticleDOI
Superfast fronts of impact ionization in initially unbiased layered semiconductor structures
TL;DR: The mechanism of front propagation is identified and the possibility to excite superfast ionizationfronts not in layered structures but in bulk semiconductors isDiscussed, which means the system will reach the high conductivity state via the propagation of a superfast impact ionization front.
Journal Article
Superfast fronts of impact ionization in initially unbiased layered semiconductor structures
TL;DR: In this paper, numerical simulations of superfast impact ionization front propagation in initially unbiased layered semiconductor structures are presented, showing that when a sufficiently sharp voltage ramp is applied in the reverse direction to an initially unbiased Si-n-n−n−+-structure connected in series with a load, after some delay the system will reach the high conductivity state via the propagation of a superfast ionisation front which leaves a dense electron-hole plasma behind.
References
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Journal ArticleDOI
High-power, high-efficiency silicon avalanche diodes at ultra high frequencies
TL;DR: Silicon avalanche diodes with a pnn+mesa structure were made according to suitably chosen design parameters, and carefully fabricated to meet stringent pedormance specifications, operating under pulse conditions with a duty factor of approximately 10-3, efficiencies as high as 25 percent, and power outputs up to 435 watts at 425 megahertz as discussed by the authors.
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High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency
TL;DR: In this paper, computer simulation of diode and circuit behavior has provided an explanation for the observed results of the Ge avalanche diodes at frequencies of 2-3 GHz at 2.5 GHz.
Journal ArticleDOI
Negative resistance and filamentary currents in avalanching silicon p + -i-n + junctions
M.W. Muller,H. Guckel +1 more
TL;DR: In this paper, a steady state can be found in which the generation of carriers in the filament by impact ionization is balanced by radial diffusion of carriers, and the total filament current is a decreasing function of the applied voltage.
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High-efficiency CW impatt operation
D.E. Iglesias,W.J. Evans +1 more
TL;DR: In this paper, room-temperature operation of Ge Impatt diodes with efficiencies as high as 43 percent in the 400 to 1000 MHz frequency range has been achieved.
Journal ArticleDOI
AVALANCHE SHOCK FRONTS IN p‐n JUNCTIONS
TL;DR: In this article, a new transient mode of avalanche breakdown in p−n junctions is described. And an approximate analysis is given, and compared with numerical calculations, in order to interpret the observed high efficiency microwave oscillations of the trapped plasmas ''TRAPATT'' mode.