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Journal ArticleDOI

Direct amplitude modulation of short‐cavity GaAs lasers up to X‐band frequencies

Kam Y. Lau, +4 more
- 01 Jul 1983 - 
- Vol. 43, Iss: 1, pp 1-3
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TLDR
In this paper, a high-frequency laser with a short cavity with a window structure and operating at low temperatures is proposed to achieve a modulation bandwidth of >8 GHz without any special window structure at room temperature.
Abstract
Experimental and theoretical studies indicate that a high‐frequency laser with bandwidths up to X‐band frequencies (≳10 GHz) should be one having a short cavity with a window structure, and preferably operating at low temperatures. These designs would accomplish the task of shortening the photon lifetime, increasing the intrinsic optical gain, and increasing the internal photon density without inflicting mirror damage. A modulation bandwidth of >8 GHz has been achieved using a 120‐μm laser without any special window structure at room temperature.

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Citations
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Journal ArticleDOI

Quantum well lasers--Gain, spectra, dynamics

TL;DR: In this article, the authors discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics and reveal that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices.
Journal ArticleDOI

High-speed modulation of semiconductor lasers

TL;DR: In this paper, an overview of the direct modulation performance of high-speed semiconductor lasers is given, using a cascaded two-port model of the laser, which separates the electrical parasitics from the intrinsic laser and enables these subsections to be considered separately.
Proceedings ArticleDOI

Optical-fiber delay line signal processing

TL;DR: In this paper, a general overview of the elementary forms of fiber circuitry that are useful for signal processing as well as the complex filters and systems that they can be used to construct is provided.
Journal ArticleDOI

Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers

TL;DR: In this article, the authors investigate theoretically a number of important issues related to the performance of AlGaAs quantum well (QW) semiconductor lasers, and reveal the existence of gain saturation with current in structures with a small number of wells, pointing to a possible two-fold increase in modulation bandwidth and a ten-fold decrease in the spectral laser linewidth in a thin QW laser compared to a conventional double heterostructure laser.
Journal ArticleDOI

Quantum noise and dynamics in quantum well and quantum wire lasers

TL;DR: In this paper, the relaxation oscillation corner frequency fr and linewidth enhancement factor alpha for both a quantum well and a quantum wire semiconductor laser were calculated and compared to those of a conventional double heterostructure device.
References
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Journal ArticleDOI

Calculated spectral dependence of gain in excited GaAs

TL;DR: In this article, the calculated dependence of the gain coefficient on photon energy and excitation level in GaAs is given for 297 and 77 K. The qualitative behavior of the results is in agreement with experiment.
Journal ArticleDOI

Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers

TL;DR: In this article, a new method for measuring absorption and gain spectra of lasers is presented, which is based on the application of general relations between the rates of spontaneous emission, stimulated emission, and optical absorption.
Journal ArticleDOI

An AlGaAs window structure laser

TL;DR: In this article, an AlGaAs "window structure" laser with a 5 μm wide stripe was used to achieve 80 mW optical power in CW operation, which was at least one order of magnitude higher than the threshold of the catastrophic optical damage threshold in conventional structures.
Journal ArticleDOI

Large optical cavity AlGaAs buried heterostructure window lasers

TL;DR: In this article, a large optical cavity buried heterostructure window laser with only the transparent AlGaAs waveguiding layers, and not the active layer, extend to the laser mirrors has been fabricated.
Journal ArticleDOI

High-frequency characteristics of GaAlAs injection lasers

TL;DR: In this paper, an extensive experimental study of the high-frequency characteristics of several commercial (GaAl)As injection lasers was conducted, and the authors found that the maximum practical analog modulation frequency f o is in the range of 5 GHz, which is limited by a combination of laser relaxation resonance, laser parasitics, and drive current necessary for long-life operation.
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